The systematic doping behavior of BiSb alloy thin films was investigated. The effects of Te and Sn dopants on the thermoelectric power (TEP), electric conductivity, and Hall effect on the films were examined at temperature range 5-300 K. Increased doping with either Sn or Te decreased the TEP. Highly-doped samples with Sn or Te demonstrated degenerate behavior in the electrical conductivity, TEP and Hall measurement.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Applied Physics|
|State||Published - Apr 1 1999|
ASJC Scopus subject areas
- Physics and Astronomy(all)