Thermoelectric transport properties of n-doped and p-doped Bi 0.91 Sb 0.09 alloy thin films

Sunglae Cho, Antonio DiVenere, George K. Wong, John B Ketterson, Jerry R. Meyer

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


The systematic doping behavior of BiSb alloy thin films was investigated. The effects of Te and Sn dopants on the thermoelectric power (TEP), electric conductivity, and Hall effect on the films were examined at temperature range 5-300 K. Increased doping with either Sn or Te decreased the TEP. Highly-doped samples with Sn or Te demonstrated degenerate behavior in the electrical conductivity, TEP and Hall measurement.

Original languageEnglish (US)
Pages (from-to)3655-3660
Number of pages6
JournalJournal of Applied Physics
Issue number7
StatePublished - Apr 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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