Thermoelectric transport properties of n-doped and p-doped Bi0.91Sb0.09 alloy thin films

Sunglae Cho; Antonio DiVenere; George K. Wong; John B. Ketterson; Jerry R. Meyer

doi:10.1063/1.369729

Thermoelectric transport properties of n-doped and p-doped Bi_0.91Sb_0.09 alloy thin films

Sunglae Cho, Antonio DiVenere, George K. Wong, John B. Ketterson, Jerry R. Meyer

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The systematic doping behavior of BiSb alloy thin films was investigated. The effects of Te and Sn dopants on the thermoelectric power (TEP), electric conductivity, and Hall effect on the films were examined at temperature range 5-300 K. Increased doping with either Sn or Te decreased the TEP. Highly-doped samples with Sn or Te demonstrated degenerate behavior in the electrical conductivity, TEP and Hall measurement.

Original language	English (US)
Pages (from-to)	3655-3660
Number of pages	6
Journal	Journal of Applied Physics
Volume	85
Issue number	7
DOIs	https://doi.org/10.1063/1.369729
State	Published - Apr 1 1999

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.369729

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abstract = "The systematic doping behavior of BiSb alloy thin films was investigated. The effects of Te and Sn dopants on the thermoelectric power (TEP), electric conductivity, and Hall effect on the films were examined at temperature range 5-300 K. Increased doping with either Sn or Te decreased the TEP. Highly-doped samples with Sn or Te demonstrated degenerate behavior in the electrical conductivity, TEP and Hall measurement.",

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AU - Cho, Sunglae

AU - DiVenere, Antonio

AU - Wong, George K.

AU - Ketterson, John B.

AU - Meyer, Jerry R.

PY - 1999/4/1

Y1 - 1999/4/1

N2 - The systematic doping behavior of BiSb alloy thin films was investigated. The effects of Te and Sn dopants on the thermoelectric power (TEP), electric conductivity, and Hall effect on the films were examined at temperature range 5-300 K. Increased doping with either Sn or Te decreased the TEP. Highly-doped samples with Sn or Te demonstrated degenerate behavior in the electrical conductivity, TEP and Hall measurement.

AB - The systematic doping behavior of BiSb alloy thin films was investigated. The effects of Te and Sn dopants on the thermoelectric power (TEP), electric conductivity, and Hall effect on the films were examined at temperature range 5-300 K. Increased doping with either Sn or Te decreased the TEP. Highly-doped samples with Sn or Te demonstrated degenerate behavior in the electrical conductivity, TEP and Hall measurement.

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Thermoelectric transport properties of n-doped and p-doped Bi_0.91Sb_0.09 alloy thin films

Abstract

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