Thin-Film Antimonide-Based Photodetectors Integrated on Si

Yiyun Zhang, Abbas Haddadi, Romain Chevallier, Arash Dehzangi, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Monolithic integration of antimonide (Sb)-based compound semiconductors on Si is in high demand to enrich silicon photonics by extending the detection range to longer infrared wavelengths. In this paper, we have demonstrated the damage-free transfer of large-Area ( × 1 cm2) narrow-bandgap Sb-based type-II superlattice (T2SL)-based thin-film materials onto a Si substrate using a combination of wafer-bonding and chemical epilayer release techniques. An array of Sb-based T2SL-based long-wavelength infrared (LWIR) photodetectors with diameters from 100 to 400∼μ {m} has been successfully fabricated using standard 'top-down' processing technique. The transferred LWIR photodetectors exhibit a cut-off wavelength of ∼ 8.6∼μ {m} at 77 K. The dark current density of the transferred photodetectors under 200 mV applied bias at 77 K is as low as 5.7× 10{\mathrm {-4}} A/cm2 and the {R}× {A} reaches 66.3∼Ω \cdot cm2, exhibiting no electrical degradation compared with reference samples on GaSb native substrate. The quantum efficiency and peak responsivity at 6.75∼μ {m} (@77 K, 200 mV) are 46.2% and 2.44 A/W, respectively. The specific detectivity (D∗) at 6.75∼μ {m} reaches as high as 1.6× 10{\mathrm {11}} cm Hz1/2/W under 200 mV bias at 77 K. Our method opens a reliable pathway to realize high performance and practical Sb-based optoelectronic devices on a Si platform.

Original languageEnglish (US)
Article number8300304
JournalIEEE Journal of Quantum Electronics
Issue number2
StatePublished - Apr 2018


  • Type-II superlattice infrared photodetectors
  • epitaxial lift-off
  • photonics integration

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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