Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3

D. M. Gill*, C. W. Conrad, G. Ford, Bruce W Wessels, Seng-Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalArticle

121 Scopus citations

Abstract

We report on a thin-film channel waveguide electro-optic modulator fabricated in epitaxial BaTiO3 on MgO. Films had an effective dc electro-optic coefficient of reff∼50±5 pm/V and reff∼28±2 pm/V at 5 MHz for λ∼1.55 μm light. Extinction ratios of 14 dB were obtained. The electro-optic effect decreases to ∼60% of the dc value at 1 Hz, 50% of the dc value at 20 kHz, and ∼37% of the dc value at 5 MHz.

Original languageEnglish (US)
Pages (from-to)1783-1785
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number13
DOIs
StatePublished - Sep 29 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO<sub>3</sub>'. Together they form a unique fingerprint.

Cite this