Thin film transistors with wurtzite ZnO channels grown on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition

D. J. Rogers, V. E. Sandana, F. Hosseini Teherani, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Thin Film Transistors (TFT) were made by growing ZnO on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ∼ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

Original languageEnglish (US)
Title of host publicationOxide-based Materials and Devices
DOIs
StatePublished - May 7 2010
EventOxide-based Materials and Devices - San Francisco, CA, United States
Duration: Jan 24 2010Jan 27 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7603
ISSN (Print)0277-786X

Other

OtherOxide-based Materials and Devices
CountryUnited States
CitySan Francisco, CA
Period1/24/101/27/10

Keywords

  • Pulsed laser deposition
  • Thin film transistor
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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