Thin film transistors with wurtzite ZnO channels grown on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition

D. J. Rogers; V. E. Sandana; F. Hosseini Teherani; M. Razeghi

doi:10.1117/12.848512

Thin film transistors with wurtzite ZnO channels grown on Si ₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition

D. J. Rogers, V. E. Sandana, F. Hosseini Teherani, M. Razeghi

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Thin Film Transistors (TFT) were made by growing ZnO on Si ₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a V_ON ∼ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

Original language	English (US)
Title of host publication	Oxide-based Materials and Devices
DOIs	https://doi.org/10.1117/12.848512
State	Published - 2010
Event	Oxide-based Materials and Devices - San Francisco, CA, United States Duration: Jan 24 2010 → Jan 27 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7603
ISSN (Print)	0277-786X

Other

Other	Oxide-based Materials and Devices
Country/Territory	United States
City	San Francisco, CA
Period	1/24/10 → 1/27/10

Keywords

Pulsed laser deposition
Thin film transistor
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.848512

Cite this

@inproceedings{60ff157bc1454d299cf0c4eaf0b4d4e6,

title = "Thin film transistors with wurtzite ZnO channels grown on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition",

abstract = "Thin Film Transistors (TFT) were made by growing ZnO on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ∼ 0V. When scaled down, such TFTs may be of interest for high frequency applications.",

keywords = "Pulsed laser deposition, Thin film transistor, ZnO",

author = "Rogers, {D. J.} and Sandana, {V. E.} and Teherani, {F. Hosseini} and M. Razeghi",

year = "2010",

doi = "10.1117/12.848512",

language = "English (US)",

isbn = "9780819479990",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Oxide-based Materials and Devices",

note = "Oxide-based Materials and Devices ; Conference date: 24-01-2010 Through 27-01-2010",

}

Rogers, DJ, Sandana, VE, Teherani, FH & Razeghi, M 2010, Thin film transistors with wurtzite ZnO channels grown on Si ₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition. in Oxide-based Materials and Devices., 760318, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7603, Oxide-based Materials and Devices, San Francisco, CA, United States, 1/24/10. https://doi.org/10.1117/12.848512

Thin film transistors with wurtzite ZnO channels grown on Si ₃N₄/SiO₂/Si (111) substrates by pulsed laser deposition. / Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini et al.
Oxide-based Materials and Devices. 2010. 760318 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7603).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Thin film transistors with wurtzite ZnO channels grown on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition

AU - Rogers, D. J.

AU - Sandana, V. E.

AU - Teherani, F. Hosseini

AU - Razeghi, M.

PY - 2010

Y1 - 2010

N2 - Thin Film Transistors (TFT) were made by growing ZnO on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ∼ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

AB - Thin Film Transistors (TFT) were made by growing ZnO on Si 3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a VON ∼ 0V. When scaled down, such TFTs may be of interest for high frequency applications.

KW - Pulsed laser deposition

KW - Thin film transistor

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=77951724976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951724976&partnerID=8YFLogxK

U2 - 10.1117/12.848512

DO - 10.1117/12.848512

M3 - Conference contribution

AN - SCOPUS:77951724976

SN - 9780819479990

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-based Materials and Devices

T2 - Oxide-based Materials and Devices

Y2 - 24 January 2010 through 27 January 2010

ER -