Thin films of the spinel Cd1+xIn2-2xSnxO4 transparent conducting oxide solution

D. R. Kammler, Thomas O Mason*, D. L. Young, T. J. Coutts

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


Thin films of a transparent conducting oxide solid solution Cd1+xIn2-2xSnxO4 (x = 0.15, 0.45, and 0.70) were deposited via rf magnetron sputtering. X-ray diffraction indicated the films consisted of a polycrystalline spinel phase. Atomic force microscopy measurements revealed a surface root mean square roughness between 1.3 and 6.0 nm. Optical absorption was 10% or less in the visible for x = 0.15, 0.45, and 0.70. Optical gaps averaged near 3.5, 3.70, and 3.65 eV for films annealed in Ar/CdS of compositions corresponding to x = 0.15, 0.45, and 0.70. Conductivity exceeded 2000 S/cm for x = 0.15 and 4000 S/cm for x = 0.45 and 0.70. Mobilities of 43, 50, and 56 cm2/V s were measured for films annealed in Ar/CdS of compositions corresponding to x = 0.15, 0.45, and 0.70, respectively. Composition data obtained via electron probe microanalysis indicate the films are becoming Cd deficient during the annealing process. This suggests an excess of In+3 and/or Sn+4 on Cd+2 sites may play a role in carrier production in these films. The Cd volatilization may also inhibit crystallization and decrease mobility.

Original languageEnglish (US)
Pages (from-to)3263-3268
Number of pages6
JournalJournal of Applied Physics
Issue number7
StatePublished - Oct 1 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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