Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems

Enming Song, Hui Fang, Xin Jin, Jianing Zhao, Chunsheng Jiang, Ki Jun Yu, Yiding Zhong, Dong Xu, Jinghua Li, Guanhua Fang, Haina Du, Jize Zhang, Jeong Min Park, Yonggang Huang, Muhammad A. Alam, Yongfeng Mei, John A Rogers

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Thin, physically transferred layers of silicon dioxide (SiO 2 ) thermally grown on the surfaces of silicon wafers offer excellent properties as long-lived, hermetic biofluid barriers in flexible electronic implants. This paper explores materials and physics aspects of the transport of ions through the SiO 2 and the resultant effects on device performance and reliability. Accelerated soak tests of devices under electrical bias stress relative to a surrounding phosphate buffered saline (PBS) solution at a pH of 7.4 reveal the field dependence of these processes. Similar experimental protocols establish that coatings of SiN x on the SiO 2 can block the passage of ions. Systematic experimental and theoretical investigations reveal the details associated with transport though this bilayer structure, and they serve as the basis for lifetime projections corresponding to more than a decade of immersion in PBS solution at 37 °C for the case of 100/200 nm of SiO 2 /SiN x . Temperature-dependent simulations offer further understanding of two competing failure mechanisms—dissolution and ion diffusion—on device lifetime. These findings establish a basic physical understanding of effects that are essential to the stable operation of flexible electronics as chronic implants.

Original languageEnglish (US)
Article number1700077
JournalAdvanced Electronic Materials
Volume3
Issue number8
DOIs
StatePublished - Aug 1 2017

Fingerprint

Flexible electronics
Silicon nitride
Silicon Dioxide
Silica
Ions
Sodium Chloride
Water
Phosphates
Silicon wafers
Physics
Coatings
silicon nitride
Temperature

Keywords

  • flexible electronics
  • silicon dioxide
  • silicon nitride
  • thin film encapsulation
  • water/ion barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Song, Enming ; Fang, Hui ; Jin, Xin ; Zhao, Jianing ; Jiang, Chunsheng ; Yu, Ki Jun ; Zhong, Yiding ; Xu, Dong ; Li, Jinghua ; Fang, Guanhua ; Du, Haina ; Zhang, Jize ; Park, Jeong Min ; Huang, Yonggang ; Alam, Muhammad A. ; Mei, Yongfeng ; Rogers, John A. / Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems. In: Advanced Electronic Materials. 2017 ; Vol. 3, No. 8.
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abstract = "Thin, physically transferred layers of silicon dioxide (SiO 2 ) thermally grown on the surfaces of silicon wafers offer excellent properties as long-lived, hermetic biofluid barriers in flexible electronic implants. This paper explores materials and physics aspects of the transport of ions through the SiO 2 and the resultant effects on device performance and reliability. Accelerated soak tests of devices under electrical bias stress relative to a surrounding phosphate buffered saline (PBS) solution at a pH of 7.4 reveal the field dependence of these processes. Similar experimental protocols establish that coatings of SiN x on the SiO 2 can block the passage of ions. Systematic experimental and theoretical investigations reveal the details associated with transport though this bilayer structure, and they serve as the basis for lifetime projections corresponding to more than a decade of immersion in PBS solution at 37 °C for the case of 100/200 nm of SiO 2 /SiN x . Temperature-dependent simulations offer further understanding of two competing failure mechanisms—dissolution and ion diffusion—on device lifetime. These findings establish a basic physical understanding of effects that are essential to the stable operation of flexible electronics as chronic implants.",
keywords = "flexible electronics, silicon dioxide, silicon nitride, thin film encapsulation, water/ion barrier",
author = "Enming Song and Hui Fang and Xin Jin and Jianing Zhao and Chunsheng Jiang and Yu, {Ki Jun} and Yiding Zhong and Dong Xu and Jinghua Li and Guanhua Fang and Haina Du and Jize Zhang and Park, {Jeong Min} and Yonggang Huang and Alam, {Muhammad A.} and Yongfeng Mei and Rogers, {John A}",
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Song, E, Fang, H, Jin, X, Zhao, J, Jiang, C, Yu, KJ, Zhong, Y, Xu, D, Li, J, Fang, G, Du, H, Zhang, J, Park, JM, Huang, Y, Alam, MA, Mei, Y & Rogers, JA 2017, 'Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems', Advanced Electronic Materials, vol. 3, no. 8, 1700077. https://doi.org/10.1002/aelm.201700077

Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems. / Song, Enming; Fang, Hui; Jin, Xin; Zhao, Jianing; Jiang, Chunsheng; Yu, Ki Jun; Zhong, Yiding; Xu, Dong; Li, Jinghua; Fang, Guanhua; Du, Haina; Zhang, Jize; Park, Jeong Min; Huang, Yonggang; Alam, Muhammad A.; Mei, Yongfeng; Rogers, John A.

In: Advanced Electronic Materials, Vol. 3, No. 8, 1700077, 01.08.2017.

Research output: Contribution to journalArticle

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T1 - Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems

AU - Song, Enming

AU - Fang, Hui

AU - Jin, Xin

AU - Zhao, Jianing

AU - Jiang, Chunsheng

AU - Yu, Ki Jun

AU - Zhong, Yiding

AU - Xu, Dong

AU - Li, Jinghua

AU - Fang, Guanhua

AU - Du, Haina

AU - Zhang, Jize

AU - Park, Jeong Min

AU - Huang, Yonggang

AU - Alam, Muhammad A.

AU - Mei, Yongfeng

AU - Rogers, John A

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Thin, physically transferred layers of silicon dioxide (SiO 2 ) thermally grown on the surfaces of silicon wafers offer excellent properties as long-lived, hermetic biofluid barriers in flexible electronic implants. This paper explores materials and physics aspects of the transport of ions through the SiO 2 and the resultant effects on device performance and reliability. Accelerated soak tests of devices under electrical bias stress relative to a surrounding phosphate buffered saline (PBS) solution at a pH of 7.4 reveal the field dependence of these processes. Similar experimental protocols establish that coatings of SiN x on the SiO 2 can block the passage of ions. Systematic experimental and theoretical investigations reveal the details associated with transport though this bilayer structure, and they serve as the basis for lifetime projections corresponding to more than a decade of immersion in PBS solution at 37 °C for the case of 100/200 nm of SiO 2 /SiN x . Temperature-dependent simulations offer further understanding of two competing failure mechanisms—dissolution and ion diffusion—on device lifetime. These findings establish a basic physical understanding of effects that are essential to the stable operation of flexible electronics as chronic implants.

AB - Thin, physically transferred layers of silicon dioxide (SiO 2 ) thermally grown on the surfaces of silicon wafers offer excellent properties as long-lived, hermetic biofluid barriers in flexible electronic implants. This paper explores materials and physics aspects of the transport of ions through the SiO 2 and the resultant effects on device performance and reliability. Accelerated soak tests of devices under electrical bias stress relative to a surrounding phosphate buffered saline (PBS) solution at a pH of 7.4 reveal the field dependence of these processes. Similar experimental protocols establish that coatings of SiN x on the SiO 2 can block the passage of ions. Systematic experimental and theoretical investigations reveal the details associated with transport though this bilayer structure, and they serve as the basis for lifetime projections corresponding to more than a decade of immersion in PBS solution at 37 °C for the case of 100/200 nm of SiO 2 /SiN x . Temperature-dependent simulations offer further understanding of two competing failure mechanisms—dissolution and ion diffusion—on device lifetime. These findings establish a basic physical understanding of effects that are essential to the stable operation of flexible electronics as chronic implants.

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