Three-dimensional atom-probe tomographic studies of nickel monosilicide/silicon interfaces on a subnanometer scale

Praneet Adusumilli*, Conal E. Murray, Lincoln J. Lauhon, Ori Avayu, Yossi Rosenwaks, David N. Seidman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Three-dimensional atom-probe tomography was utilized to study the distribution of M (M = Pt or Pd) after silicidation of a solid-solution Ni 0.95M0.05 thin-film on Si(100). Both Pt and Pd segregate at the (Ni1.xMx)Si/Si(100) heterophase interface and may be responsible for the increased resistance of (Ni1.xMx)Si to agglomeration at elevated temperatures. Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison regime-B, is found after silicidation to form (Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena in stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi as determined by Kelvin probe force-microscopy. The nickel monosilicide/Si heterophase interface is reconstructed in three-dimensions and its chemical roughness is evaluated.

Original languageEnglish (US)
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages303-314
Number of pages12
Edition1
DOIs
StatePublished - Dec 1 2009
EventInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting - San Francisco, CA, United States
Duration: May 24 2009May 29 2009

Publication series

NameECS Transactions
Number1
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period5/24/095/29/09

ASJC Scopus subject areas

  • Engineering(all)

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