@inproceedings{87e7e077643846eebbc58ccab3840546,
title = "Three-dimensional atom-probe tomographic studies of nickel monosilicide/silicon interfaces on a subnanometer scale",
abstract = "Three-dimensional atom-probe tomography was utilized to study the distribution of M (M = Pt or Pd) after silicidation of a solid-solution Ni 0.95M0.05 thin-film on Si(100). Both Pt and Pd segregate at the (Ni1.xMx)Si/Si(100) heterophase interface and may be responsible for the increased resistance of (Ni1.xMx)Si to agglomeration at elevated temperatures. Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison regime-B, is found after silicidation to form (Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena in stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi as determined by Kelvin probe force-microscopy. The nickel monosilicide/Si heterophase interface is reconstructed in three-dimensions and its chemical roughness is evaluated.",
author = "Praneet Adusumilli and Murray, {Conal E.} and Lauhon, {Lincoln J.} and Ori Avayu and Yossi Rosenwaks and Seidman, {David N.}",
year = "2009",
doi = "10.1149/1.3118957",
language = "English (US)",
isbn = "9781566777094",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "303--314",
booktitle = "ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5",
edition = "1",
note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",
}