Three-dimensional atomic-scale mapping of Pd in Ni1-x Pdx SiSi (100) thin films

Yeong Cheol Kim; Praneet Adusumilli; Lincoln J. Lauhon; David N. Seidman; Soon Yen Jung; Hi Deok Lee; Roger L. Alvis; Rob M. Ulfig; Jesse D. Olson

doi:10.1063/1.2784196

Three-dimensional atomic-scale mapping of Pd in Ni1-x Pdx SiSi (100) thin films

Yeong Cheol Kim^*, Praneet Adusumilli, Lincoln J. Lauhon, David N. Seidman, Soon Yen Jung, Hi Deok Lee, Roger L. Alvis, Rob M. Ulfig, Jesse D. Olson

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95 Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95 Pd0.05) SiSi (100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated.

Original language	English (US)
Article number	113106
Journal	Applied Physics Letters
Volume	91
Issue number	11
DOIs	https://doi.org/10.1063/1.2784196
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2784196

Cite this

@article{325919f67eb646a5911f17e75b3a2c32,

title = "Three-dimensional atomic-scale mapping of Pd in Ni1-x Pdx SiSi (100) thin films",

abstract = "Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95 Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95 Pd0.05) SiSi (100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated.",

author = "Kim, {Yeong Cheol} and Praneet Adusumilli and Lauhon, {Lincoln J.} and Seidman, {David N.} and Jung, {Soon Yen} and Lee, {Hi Deok} and Alvis, {Roger L.} and Ulfig, {Rob M.} and Olson, {Jesse D.}",

note = "Funding Information: This research is supported by Semiconductor Research Corporation, Task No. 1441.001. Professor Yeong-Cheol Kim is an Imago Scientific Instruments Senior Fellow (2006–2007) and acknowledges their partial support. One of the authors (L.J.L.) acknowledges support of an Alfred P. Sloan Foundation fellowship. Professor Y. Rosenwaks is thanked for discussions and Research Professor D. Isheim is thanked for managing the Northwestern Center for Atom-Probe Tomography (NUCAPT).",

year = "2007",

doi = "10.1063/1.2784196",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Three-dimensional atomic-scale mapping of Pd in Ni1-x Pdx SiSi (100) thin films

AU - Kim, Yeong Cheol

AU - Adusumilli, Praneet

AU - Lauhon, Lincoln J.

AU - Seidman, David N.

AU - Jung, Soon Yen

AU - Lee, Hi Deok

AU - Alvis, Roger L.

AU - Ulfig, Rob M.

AU - Olson, Jesse D.

N1 - Funding Information: This research is supported by Semiconductor Research Corporation, Task No. 1441.001. Professor Yeong-Cheol Kim is an Imago Scientific Instruments Senior Fellow (2006–2007) and acknowledges their partial support. One of the authors (L.J.L.) acknowledges support of an Alfred P. Sloan Foundation fellowship. Professor Y. Rosenwaks is thanked for discussions and Research Professor D. Isheim is thanked for managing the Northwestern Center for Atom-Probe Tomography (NUCAPT).

PY - 2007

Y1 - 2007

N2 - Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95 Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95 Pd0.05) SiSi (100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated.

AB - Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95 Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95 Pd0.05) SiSi (100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated.

UR - http://www.scopus.com/inward/record.url?scp=34548682801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548682801&partnerID=8YFLogxK

U2 - 10.1063/1.2784196

DO - 10.1063/1.2784196

M3 - Article

AN - SCOPUS:34548682801

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113106

ER -

Three-dimensional atomic-scale mapping of Pd in Ni1-x Pdx SiSi (100) thin films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this