Three-dimensional atomic-scale mapping of Pd in Ni1-x Pdx SiSi (100) thin films

Yeong Cheol Kim*, Praneet Adusumilli, Lincoln J. Lauhon, David N. Seidman, Soon Yen Jung, Hi Deok Lee, Roger L. Alvis, Rob M. Ulfig, Jesse D. Olson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95 Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95 Pd0.05) SiSi (100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated.

Original languageEnglish (US)
Article number113106
JournalApplied Physics Letters
Volume91
Issue number11
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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