Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array

James R. Riley; Sonal Padalkar; Qiming Li; Ping Lu; Daniel D. Koleske; Jonathan J. Wierer; George T. Wang; Lincoln J. Lauhon

doi:10.1021/nl4021045

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array

James R. Riley, Sonal Padalkar, Qiming Li, Ping Lu, Daniel D. Koleske, Jonathan J. Wierer, George T. Wang, Lincoln J. Lauhon^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.

Original language	English (US)
Pages (from-to)	4317-4325
Number of pages	9
Journal	Nano letters
Volume	13
Issue number	9
DOIs	https://doi.org/10.1021/nl4021045
State	Published - Sep 11 2013

Keywords

GaN
LED
atom probe tomography
nanowire
quantum well
semiconductor

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Materials Science

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10.1021/nl4021045

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@article{ca1b90c2b3264f03b82e49bb0a3db1be,

title = "Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array",

abstract = "Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.",

keywords = "GaN, LED, atom probe tomography, nanowire, quantum well, semiconductor",

author = "Riley, {James R.} and Sonal Padalkar and Qiming Li and Ping Lu and Koleske, {Daniel D.} and Wierer, {Jonathan J.} and Wang, {George T.} and Lauhon, {Lincoln J.}",

year = "2013",

month = sep,

day = "11",

doi = "10.1021/nl4021045",

language = "English (US)",

volume = "13",

pages = "4317--4325",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array

AU - Riley, James R.

AU - Padalkar, Sonal

AU - Li, Qiming

AU - Lu, Ping

AU - Koleske, Daniel D.

AU - Wierer, Jonathan J.

AU - Wang, George T.

AU - Lauhon, Lincoln J.

PY - 2013/9/11

Y1 - 2013/9/11

N2 - Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.

AB - Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.

KW - GaN

KW - LED

KW - atom probe tomography

KW - nanowire

KW - quantum well

KW - semiconductor

UR - http://www.scopus.com/inward/record.url?scp=84884242693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884242693&partnerID=8YFLogxK

U2 - 10.1021/nl4021045

DO - 10.1021/nl4021045

M3 - Article

C2 - 23919559

AN - SCOPUS:84884242693

SN - 1530-6984

VL - 13

SP - 4317

EP - 4325

JO - Nano letters

JF - Nano letters

IS - 9

ER -

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array

Abstract

Keywords

ASJC Scopus subject areas

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