Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array

James R. Riley, Sonal Padalkar, Qiming Li, Ping Lu, Daniel D. Koleske, Jonathan J. Wierer, George T. Wang, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

84 Scopus citations

Abstract

Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.

Original languageEnglish (US)
Pages (from-to)4317-4325
Number of pages9
JournalNano letters
Volume13
Issue number9
DOIs
StatePublished - Sep 11 2013

Keywords

  • GaN
  • LED
  • atom probe tomography
  • nanowire
  • quantum well
  • semiconductor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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