Three-dimensional nanoscale composition mapping of semiconductor nanowires

Daniel E. Perea, Jonathan E. Allen, Steven J. May, Bruce W. Wessels, David N. Seidman, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

212 Scopus citations


We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-atom sensitivity and subnanometer spatial resolution using atom probe tomography. A new class of atom probe, the local electrode atom probe (LEAP) microscope, was used to map the position of single Au atoms in an InAs nanowire and to image the interface between a Au catalyst and InAs in three dimensions with 0.3-nm resolution. These results establish atom probe tomography as a uniquely powerful tool for analyzing the chemical composition of semiconductor nanostructures.

Original languageEnglish (US)
Pages (from-to)181-185
Number of pages5
JournalNano letters
Issue number2
StatePublished - Feb 2006

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • General Materials Science


Dive into the research topics of 'Three-dimensional nanoscale composition mapping of semiconductor nanowires'. Together they form a unique fingerprint.

Cite this