Three-dimensional nanoscale composition mapping of semiconductor nanowires

Daniel E. Perea, Jonathan E. Allen, Steven J. May, Bruce W Wessels, David N Seidman, Lincoln James Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticle

190 Scopus citations

Abstract

We demonstrate the three-dimensional composition mapping of a semiconductor nanowire with single-atom sensitivity and subnanometer spatial resolution using atom probe tomography. A new class of atom probe, the local electrode atom probe (LEAP) microscope, was used to map the position of single Au atoms in an InAs nanowire and to image the interface between a Au catalyst and InAs in three dimensions with 0.3-nm resolution. These results establish atom probe tomography as a uniquely powerful tool for analyzing the chemical composition of semiconductor nanostructures.

Original languageEnglish (US)
Pages (from-to)181-185
Number of pages5
JournalNano Letters
Volume6
Issue number2
DOIs
StatePublished - Feb 1 2006

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Three-dimensional nanoscale composition mapping of semiconductor nanowires'. Together they form a unique fingerprint.

Cite this