Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process

Bong Hoon Kim, Jungyup Lee, Sang Min Won, Zhaoqian Xie, Jan Kai Chang, Yongjoon Yu, Youn Kyoung Cho, Hokyung Jang, Ji Yoon Jeong, Yechan Lee, Arin Ryu, Do Hoon Kim, Kun Hyuck Lee, Jong Yoon Lee, Fei Liu, Xueju Wang, Qingze Huo, Seunghwan Min, Di Wu, Bowen Ji & 12 others Anthony Banks, Jeonghyun Kim, Nuri Oh, Hyeong Min Jin, Seungyong Han, Daeshik Kang, Chi Hwan Lee, Young Min Song, Yihui Zhang, Yonggang Huang, Kyung In Jang*, John A Rogers

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Recently developed approaches in deterministic assembly allow for controlled, geometric transformation of two-dimensional structures into complex, engineered three-dimensional layouts. Attractive features include applicability to wide ranging layout designs and dimensions along with the capacity to integrate planar thin film materials and device layouts. The work reported here establishes further capabilities for directly embedding high-performance electronic devices into the resultant 3D constructs based on silicon nanomembranes (Si NMs) as the active materials in custom devices or microscale components released from commercial wafer sources. Systematic experimental studies and theoretical analysis illustrate the key ideas through varied 3D architectures, from interconnected bridges and coils to extended chiral structures, each of which embed n-channel Si NM MOSFETs (nMOS), Si NM diodes, and p-channel silicon MOSFETs (pMOS). Examples in stretchable/deformable systems highlight additional features of these platforms. These strategies are immediately applicable to other wide-ranging classes of materials and device technologies that can be rendered in two-dimensional layouts, from systems for energy storage, to photovoltaics, optoelectronics, and others.

Original languageEnglish (US)
Pages (from-to)4164-4171
Number of pages8
JournalACS nano
Volume12
Issue number5
DOIs
StatePublished - May 22 2018

Fingerprint

Silicon
buckling
layouts
Buckling
silicon
electronics
Thin film devices
field effect transistors
Optoelectronic devices
Energy storage
Diodes
energy storage
microbalances
embedding
coils
platforms
assembly
diodes
wafers
thin films

Keywords

  • mechanical buckling
  • silicon diode
  • silicon transistor
  • three-dimensional electronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, Bong Hoon ; Lee, Jungyup ; Won, Sang Min ; Xie, Zhaoqian ; Chang, Jan Kai ; Yu, Yongjoon ; Cho, Youn Kyoung ; Jang, Hokyung ; Jeong, Ji Yoon ; Lee, Yechan ; Ryu, Arin ; Kim, Do Hoon ; Lee, Kun Hyuck ; Lee, Jong Yoon ; Liu, Fei ; Wang, Xueju ; Huo, Qingze ; Min, Seunghwan ; Wu, Di ; Ji, Bowen ; Banks, Anthony ; Kim, Jeonghyun ; Oh, Nuri ; Jin, Hyeong Min ; Han, Seungyong ; Kang, Daeshik ; Lee, Chi Hwan ; Song, Young Min ; Zhang, Yihui ; Huang, Yonggang ; Jang, Kyung In ; Rogers, John A. / Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process. In: ACS nano. 2018 ; Vol. 12, No. 5. pp. 4164-4171.
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abstract = "Recently developed approaches in deterministic assembly allow for controlled, geometric transformation of two-dimensional structures into complex, engineered three-dimensional layouts. Attractive features include applicability to wide ranging layout designs and dimensions along with the capacity to integrate planar thin film materials and device layouts. The work reported here establishes further capabilities for directly embedding high-performance electronic devices into the resultant 3D constructs based on silicon nanomembranes (Si NMs) as the active materials in custom devices or microscale components released from commercial wafer sources. Systematic experimental studies and theoretical analysis illustrate the key ideas through varied 3D architectures, from interconnected bridges and coils to extended chiral structures, each of which embed n-channel Si NM MOSFETs (nMOS), Si NM diodes, and p-channel silicon MOSFETs (pMOS). Examples in stretchable/deformable systems highlight additional features of these platforms. These strategies are immediately applicable to other wide-ranging classes of materials and device technologies that can be rendered in two-dimensional layouts, from systems for energy storage, to photovoltaics, optoelectronics, and others.",
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Kim, BH, Lee, J, Won, SM, Xie, Z, Chang, JK, Yu, Y, Cho, YK, Jang, H, Jeong, JY, Lee, Y, Ryu, A, Kim, DH, Lee, KH, Lee, JY, Liu, F, Wang, X, Huo, Q, Min, S, Wu, D, Ji, B, Banks, A, Kim, J, Oh, N, Jin, HM, Han, S, Kang, D, Lee, CH, Song, YM, Zhang, Y, Huang, Y, Jang, KI & Rogers, JA 2018, 'Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process', ACS nano, vol. 12, no. 5, pp. 4164-4171. https://doi.org/10.1021/acsnano.8b00180

Three-Dimensional Silicon Electronic Systems Fabricated by Compressive Buckling Process. / Kim, Bong Hoon; Lee, Jungyup; Won, Sang Min; Xie, Zhaoqian; Chang, Jan Kai; Yu, Yongjoon; Cho, Youn Kyoung; Jang, Hokyung; Jeong, Ji Yoon; Lee, Yechan; Ryu, Arin; Kim, Do Hoon; Lee, Kun Hyuck; Lee, Jong Yoon; Liu, Fei; Wang, Xueju; Huo, Qingze; Min, Seunghwan; Wu, Di; Ji, Bowen; Banks, Anthony; Kim, Jeonghyun; Oh, Nuri; Jin, Hyeong Min; Han, Seungyong; Kang, Daeshik; Lee, Chi Hwan; Song, Young Min; Zhang, Yihui; Huang, Yonggang; Jang, Kyung In; Rogers, John A.

In: ACS nano, Vol. 12, No. 5, 22.05.2018, p. 4164-4171.

Research output: Contribution to journalArticle

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AU - Kim, Bong Hoon

AU - Lee, Jungyup

AU - Won, Sang Min

AU - Xie, Zhaoqian

AU - Chang, Jan Kai

AU - Yu, Yongjoon

AU - Cho, Youn Kyoung

AU - Jang, Hokyung

AU - Jeong, Ji Yoon

AU - Lee, Yechan

AU - Ryu, Arin

AU - Kim, Do Hoon

AU - Lee, Kun Hyuck

AU - Lee, Jong Yoon

AU - Liu, Fei

AU - Wang, Xueju

AU - Huo, Qingze

AU - Min, Seunghwan

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AU - Ji, Bowen

AU - Banks, Anthony

AU - Kim, Jeonghyun

AU - Oh, Nuri

AU - Jin, Hyeong Min

AU - Han, Seungyong

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AU - Lee, Chi Hwan

AU - Song, Young Min

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AU - Huang, Yonggang

AU - Jang, Kyung In

AU - Rogers, John A

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