Through-wafer electrical interconnects by sidewall photolithographic patterning

Chang Liu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

This paper describes a new photolithography technique for patterning vertical surfaces using 45-degree reflective mirrors. The resolution is limited by diffraction and by surface scattering. Using this techniques, novel through-wafer interconnects have been demonstrated with high wiring density. At 320 nm wavelength, 50 μm-wide vertical lines have been fabricated with 25 μm line-width loss.

Original languageEnglish (US)
Title of host publicationConference Record - IEEE Instrumentation and Measurement Technology Conference
Editors Anon
PublisherIEEE
Pages1402-1405
Number of pages4
Volume2
StatePublished - Jan 1 1998
EventProceedings of the 1998 IEEE Instrumentation and Measurement Technology Conference, IMTC. Part 1 (of 2) - St.Paul, MN, USA
Duration: May 18 1998May 21 1998

Other

OtherProceedings of the 1998 IEEE Instrumentation and Measurement Technology Conference, IMTC. Part 1 (of 2)
CitySt.Paul, MN, USA
Period5/18/985/21/98

ASJC Scopus subject areas

  • Instrumentation

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