Tight-binding theory for the thermal evolution of optical band gaps in semiconductors and superlattices

S. Abdollahi Pour*, B. Movaghar, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A method to handle the variation of the band gap with temperature in direct band-gap III-V semiconductors and superlattices using an empirical tight-binding method has been developed. The approach follows closely established procedures and allows parameter variations which give rise to perfect fits to the experimental data. We also apply the tight-binding method to the far more complex problem of band structures in type-II infrared superlattices for which we have access to original experimental data recently acquired by our group. Given the close packing of bands in small band-gap type-II designs, k-•p- methods become difficult to handle, and it turns out that the sp3s* tight-binding scheme is a practical and powerful asset. Other approaches to band-gap shrinkage explored in the past are discussed, scrutinized, and compared. This includes the lattice expansion term, the phonon softening mechanism, and the electron-phonon polaronic shifts calculated in perturbation theory.

Original languageEnglish (US)
Article number115331
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
StatePublished - Mar 28 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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