Time decay study of the Er3+-related luminescence inIn1-xGaxP

S. S. Ostapenko*, A. J. Neuhalfen, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Time decay measurements of the Er3+ luminescent transition were performed in In1-xGaxP epitaxial layers (x = 0-1). The luminescence kinetics of 0.8eV luminescent band are given by a superposition of exponential decay components. Polarization time decay measurements support the model of a family of anisotropic Er-related centers possessing different symmetry. A tentative model for such centers is discussed.

Original languageEnglish (US)
Pages (from-to)743-748
Number of pages6
JournalMaterials Science Forum
Volume143-4
Issue numberpt 2
StatePublished - Dec 1 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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