Time decay study of the Er3+-related luminescence inIn1-xGaxP

S. S. Ostapenko; A. J. Neuhalfen; B. W. Wessels

Time decay study of the Er³⁺-related luminescence inIn_1-xGa_xP

S. S. Ostapenko^*, A. J. Neuhalfen, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Time decay measurements of the Er³⁺ luminescent transition were performed in In_1-xGa_xP epitaxial layers (x = 0-1). The luminescence kinetics of 0.8eV luminescent band are given by a superposition of exponential decay components. Polarization time decay measurements support the model of a family of anisotropic Er-related centers possessing different symmetry. A tentative model for such centers is discussed.

Original language	English (US)
Pages (from-to)	743-748
Number of pages	6
Journal	Materials Science Forum
Volume	143-4
Issue number	pt 2
State	Published - 1994
Event	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Time decay study of the Er3+-related luminescence inIn1-xGaxP",

abstract = "Time decay measurements of the Er3+ luminescent transition were performed in In1-xGaxP epitaxial layers (x = 0-1). The luminescence kinetics of 0.8eV luminescent band are given by a superposition of exponential decay components. Polarization time decay measurements support the model of a family of anisotropic Er-related centers possessing different symmetry. A tentative model for such centers is discussed.",

author = "Ostapenko, {S. S.} and Neuhalfen, {A. J.} and Wessels, {B. W.}",

year = "1994",

language = "English (US)",

volume = "143-4",

pages = "743--748",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "pt 2",

note = "Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) ; Conference date: 18-07-1993 Through 23-07-1993",

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TY - JOUR

T1 - Time decay study of the Er3+-related luminescence inIn1-xGaxP

AU - Ostapenko, S. S.

AU - Neuhalfen, A. J.

AU - Wessels, B. W.

PY - 1994

Y1 - 1994

N2 - Time decay measurements of the Er3+ luminescent transition were performed in In1-xGaxP epitaxial layers (x = 0-1). The luminescence kinetics of 0.8eV luminescent band are given by a superposition of exponential decay components. Polarization time decay measurements support the model of a family of anisotropic Er-related centers possessing different symmetry. A tentative model for such centers is discussed.

AB - Time decay measurements of the Er3+ luminescent transition were performed in In1-xGaxP epitaxial layers (x = 0-1). The luminescence kinetics of 0.8eV luminescent band are given by a superposition of exponential decay components. Polarization time decay measurements support the model of a family of anisotropic Er-related centers possessing different symmetry. A tentative model for such centers is discussed.

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M3 - Conference article

AN - SCOPUS:0028553969

SN - 0255-5476

VL - 143-4

SP - 743

EP - 748

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 2

T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)

Y2 - 18 July 1993 through 23 July 1993

ER -

Time decay study of the Er³⁺-related luminescence inIn_1-xGa_xP

Abstract

ASJC Scopus subject areas

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