Time-resolved optical recombination in the quantum Hall regime

M. Dahl*, D. Heiman, A. Pinczuk, B. B. Goldberg, L. N. Pfeiffer, K. W. West

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Optical recombination in a 2D electron gas shows anomalous time-dependence in the quantum Hall regime at ν = 1. The recombination rate in GaAs/(Ga, Al)As structures is slowed by as much as an order of magnitude. This effect is attributed to reduced overlap of electron and hole caused by reduced screening in the localized regime. The suppression of the E0 ground-state recombination leads to a transfer of intensity into the E1 emission line associated with electrons in the excited-state subhand. It is found that the decay time of the E1 emission line increases toward the low-energy side of the peak, and the effect becomes weaker outside ν = 1.

Original languageEnglish (US)
Pages (from-to)638-641
Number of pages4
JournalSurface Science
Volume263
Issue number1-3
DOIs
StatePublished - Feb 19 1992

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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