Time-resolved photoluminescence of metamorphic inGaAs quantum wells

Shan Shan Ma*, Bao Rui Wang, Bao Quan Sun, Donghai Wu, Hai Qiao Ni, Zhi Chuan Niu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.52 μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.

Original languageEnglish (US)
Article number107803
JournalChinese Physics Letters
Volume26
Issue number10
DOIs
StatePublished - Nov 16 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Time-resolved photoluminescence of metamorphic inGaAs quantum wells'. Together they form a unique fingerprint.

Cite this