Time-resolved photoluminescence of metamorphic inGaAs quantum wells

Shan Shan Ma; Bao Rui Wang; Bao Quan Sun; Donghai Wu; Hai Qiao Ni; Zhi Chuan Niu

doi:10.1088/0256-307X/26/10/107803

Time-resolved photoluminescence of metamorphic inGaAs quantum wells

Shan Shan Ma^*, Bao Rui Wang, Bao Quan Sun, Donghai Wu, Hai Qiao Ni, Zhi Chuan Niu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.52 μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.

Original language	English (US)
Article number	107803
Journal	Chinese Physics Letters
Volume	26
Issue number	10
DOIs	https://doi.org/10.1088/0256-307X/26/10/107803
State	Published - 2009

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/0256-307X/26/10/107803

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title = "Time-resolved photoluminescence of metamorphic inGaAs quantum wells",

abstract = "We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.52 μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.",

author = "Ma, {Shan Shan} and Wang, {Bao Rui} and Sun, {Bao Quan} and Donghai Wu and Ni, {Hai Qiao} and Niu, {Zhi Chuan}",

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doi = "10.1088/0256-307X/26/10/107803",

language = "English (US)",

volume = "26",

journal = "Chinese Physics Letters",

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T1 - Time-resolved photoluminescence of metamorphic inGaAs quantum wells

AU - Ma, Shan Shan

AU - Wang, Bao Rui

AU - Sun, Bao Quan

AU - Wu, Donghai

AU - Ni, Hai Qiao

AU - Niu, Zhi Chuan

PY - 2009

Y1 - 2009

N2 - We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.52 μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.

AB - We investigate the temperature dependence of photoluminescence (PL) and time-resolved PL on the metamorphic InGaAs quantum wells (QWs) with an emission wavelength of 1.52 μm at room temperature. Time-resolved PL measurements reveal that the optical properties can be partly improved by introducing antimony (Sb) as a surfactant during the sample growth. The temperature dependence of the radiative lifetime is measured, showing that for QWs grown with Sb assistance, the intrinsic exciton emission is dominated when the temperature is below 60 K, while the nonradiative process becomes activated with further increases in temperature. However, without Sb assistance, the nonradiative centers are activated when the temperature is higher than 20 K.

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DO - 10.1088/0256-307X/26/10/107803

M3 - Article

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SN - 0256-307X

VL - 26

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 10

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Time-resolved photoluminescence of metamorphic inGaAs quantum wells

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