Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy

G. E. Bunea*, W. D. Herzog, M. S. Ünlü, B. B. Goldberg, R. J. Molnar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

Time-resolved photoluminescence (PL) spectroscopy was used to study the radiative recombination of free and donor-bound excitons in unintentionally doped GaN grown by hydride vapor phase epitaxy. Low temperature (4 K), time-integrated PL spectra identified the free exciton (A), the donor-bound exciton peak ∼6 meV below, and the acceptor-bound exciton ∼20 meV below the free exciton peak. A radiative recombination lifetime of 295 ps for the free exciton and 530 ps for donor-bound exciton were found at 4 K. The decay of the free exciton remained single exponential to room temperature, with an increase in lifetime to 530 ps, consistent with the thermal excitation of exciton states.

Original languageEnglish (US)
Pages (from-to)838-840
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number6
DOIs
StatePublished - Aug 9 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy'. Together they form a unique fingerprint.

Cite this