Abstract
Time-resolved photoluminescence (PL) spectroscopy was used to study the radiative recombination of free and donor-bound excitons in unintentionally doped GaN grown by hydride vapor phase epitaxy. Low temperature (4 K), time-integrated PL spectra identified the free exciton (A), the donor-bound exciton peak ∼6 meV below, and the acceptor-bound exciton ∼20 meV below the free exciton peak. A radiative recombination lifetime of 295 ps for the free exciton and 530 ps for donor-bound exciton were found at 4 K. The decay of the free exciton remained single exponential to room temperature, with an increase in lifetime to 530 ps, consistent with the thermal excitation of exciton states.
Original language | English (US) |
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Pages (from-to) | 838-840 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 6 |
DOIs | |
State | Published - Aug 9 1999 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)