Time resolved spectroscopy of InMnAs using differential transmission technique in mid-infrared

M. Bhowmick; T. R. Merritt; K. Nontapot; B. W. Wessels; O. Drachenko; G. A. Khodaparast

doi:10.1016/j.phpro.2010.01.157

Time resolved spectroscopy of InMnAs using differential transmission technique in mid-infrared

M. Bhowmick, T. R. Merritt, K. Nontapot, B. W. Wessels, O. Drachenko, G. A. Khodaparast^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

InMnAs grown by MOVPE is a room temperature ferromagnetic semiconductor with a T_c of 330 K. The origin of the ferromagnetism and the interactions between itinerant carriers and localized spins in these structures are open questions. To address these questions, the carrier and spin life time in these structures were probed in mid-infrared region. The approach in this work was focused on the time and polarization-resolved differential transmission measurements suggesting a T₁ of ∼1 ps. We compare our results with reported spin relaxations in InAs and MBE grown InMnAs.

Original language	English (US)
Pages (from-to)	1167-1170
Number of pages	4
Journal	Physics Procedia
Volume	3
Issue number	2
DOIs	https://doi.org/10.1016/j.phpro.2010.01.157
State	Published - Jan 31 2010
Event	14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: Jul 13 2009 → Jul 17 2009

Keywords

Ferromagnetic semiconductors
Ferromagnetism
Narrow gap semiconductors
Time resolved spectroscopy

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/j.phpro.2010.01.157

Cite this

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title = "Time resolved spectroscopy of InMnAs using differential transmission technique in mid-infrared",

abstract = "InMnAs grown by MOVPE is a room temperature ferromagnetic semiconductor with a Tc of 330 K. The origin of the ferromagnetism and the interactions between itinerant carriers and localized spins in these structures are open questions. To address these questions, the carrier and spin life time in these structures were probed in mid-infrared region. The approach in this work was focused on the time and polarization-resolved differential transmission measurements suggesting a T1 of ∼1 ps. We compare our results with reported spin relaxations in InAs and MBE grown InMnAs.",

keywords = "Ferromagnetic semiconductors, Ferromagnetism, Narrow gap semiconductors, Time resolved spectroscopy",

author = "M. Bhowmick and Merritt, {T. R.} and K. Nontapot and Wessels, {B. W.} and O. Drachenko and Khodaparast, {G. A.}",

note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 ; Conference date: 13-07-2009 Through 17-07-2009",

year = "2010",

month = jan,

day = "31",

doi = "10.1016/j.phpro.2010.01.157",

language = "English (US)",

volume = "3",

pages = "1167--1170",

journal = "Physics Procedia",

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publisher = "Elsevier BV",

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TY - JOUR

T1 - Time resolved spectroscopy of InMnAs using differential transmission technique in mid-infrared

AU - Bhowmick, M.

AU - Merritt, T. R.

AU - Nontapot, K.

AU - Wessels, B. W.

AU - Drachenko, O.

AU - Khodaparast, G. A.

PY - 2010/1/31

Y1 - 2010/1/31

N2 - InMnAs grown by MOVPE is a room temperature ferromagnetic semiconductor with a Tc of 330 K. The origin of the ferromagnetism and the interactions between itinerant carriers and localized spins in these structures are open questions. To address these questions, the carrier and spin life time in these structures were probed in mid-infrared region. The approach in this work was focused on the time and polarization-resolved differential transmission measurements suggesting a T1 of ∼1 ps. We compare our results with reported spin relaxations in InAs and MBE grown InMnAs.

AB - InMnAs grown by MOVPE is a room temperature ferromagnetic semiconductor with a Tc of 330 K. The origin of the ferromagnetism and the interactions between itinerant carriers and localized spins in these structures are open questions. To address these questions, the carrier and spin life time in these structures were probed in mid-infrared region. The approach in this work was focused on the time and polarization-resolved differential transmission measurements suggesting a T1 of ∼1 ps. We compare our results with reported spin relaxations in InAs and MBE grown InMnAs.

KW - Ferromagnetic semiconductors

KW - Ferromagnetism

KW - Narrow gap semiconductors

KW - Time resolved spectroscopy

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U2 - 10.1016/j.phpro.2010.01.157

DO - 10.1016/j.phpro.2010.01.157

M3 - Conference article

AN - SCOPUS:76249098248

SN - 1875-3884

VL - 3

SP - 1167

EP - 1170

JO - Physics Procedia

JF - Physics Procedia

IS - 2

T2 - 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14

Y2 - 13 July 2009 through 17 July 2009

ER -

Time resolved spectroscopy of InMnAs using differential transmission technique in mid-infrared

Abstract

Keywords

ASJC Scopus subject areas

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