Abstract
In this work we investigate carrier dynamics of narrow gap ferromagnetic alloys grown by MOVPE. We determine the intraband and interband relaxation times in these material systems where the samples are excited with photon energies above the band gap of InMnAs and InMnSb films. Our results are important for understanding the electronic states and the relaxation mechanisms in these ferromagnetic materials.
Original language | English (US) |
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Title of host publication | Spintronics V |
Volume | 8461 |
DOIs | |
State | Published - Dec 1 2012 |
Event | Spintronics V - San Diego, CA, United States Duration: Aug 12 2012 → Aug 16 2012 |
Other
Other | Spintronics V |
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Country/Territory | United States |
City | San Diego, CA |
Period | 8/12/12 → 8/16/12 |
Keywords
- Ferromagnetic semiconductors
- Narrow gap semiconductors
- Time resolved spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering