Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu*, J. A. Peters, C. Zang, Nam Ki Cho, Bruce W Wessels, Simon Johnsen, Sebastian Peter, John Androulakis, Mercouri Kanatzidis, Jung Hwan Song, Hosub Jin, Arthur J. Freeman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

Original languageEnglish (US)
Title of host publicationChemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
Volume8018
DOIs
StatePublished - Jul 21 2011
EventChemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII - Orlando, FL, United States
Duration: Apr 26 2011Apr 28 2011

Other

OtherChemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
CountryUnited States
CityOrlando, FL
Period4/26/114/28/11

Keywords

  • Photoconductivity
  • Tl-chalcogenide
  • Wide gap semiconductor
  • X-ray detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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