Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu; J. A. Peters; C. Zang; Nam Ki Cho; Bruce W. Wessels; Simon Johnsen; Sebastian Peter; John Androulakis; Mercouri G. Kanatzidis; Jung Hwan Song; Hosub Jin; Arthur J. Freeman

doi:10.1117/12.883230

Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

Zhifu Liu^*, J. A. Peters, C. Zang, Nam Ki Cho, Bruce W. Wessels, Simon Johnsen, Sebastian Peter, John Androulakis, Mercouri G. Kanatzidis, Jung Hwan Song, Hosub Jin, Arthur J. Freeman

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe₂, Tl₆I₄Se, and Tl ₂Au₄S₃ for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl₆I₄Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under ⁵⁷Co radiation, Tl₆I₄Se has a well-resolved spectral response and peak FWHM comparable to those of Cd_0.9Zn_0.1Te.

Original language	English (US)
Title of host publication	Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
DOIs	https://doi.org/10.1117/12.883230
State	Published - 2011
Event	Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII - Orlando, FL, United States Duration: Apr 26 2011 → Apr 28 2011

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8018
ISSN (Print)	0277-786X

Other

Other	Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
Country/Territory	United States
City	Orlando, FL
Period	4/26/11 → 4/28/11

Keywords

Photoconductivity
Tl-chalcogenide
Wide gap semiconductor
X-ray detector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.883230

Cite this

Liu, Z., Peters, J. A., Zang, C., Cho, N. K., Wessels, B. W., Johnsen, S., Peter, S., Androulakis, J., Kanatzidis, M. G., Song, J. H., Jin, H., & Freeman, A. J. (2011). Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. In Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII Article 80180H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8018). https://doi.org/10.1117/12.883230

@inproceedings{b2a8342f81b6402986a5b0ce8af4e32a,

title = "Tl-based wide gap semiconductor materials for x-ray and gamma ray detection",

abstract = "The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.",

keywords = "Photoconductivity, Tl-chalcogenide, Wide gap semiconductor, X-ray detector",

author = "Zhifu Liu and Peters, {J. A.} and C. Zang and Cho, {Nam Ki} and Wessels, {Bruce W.} and Simon Johnsen and Sebastian Peter and John Androulakis and Kanatzidis, {Mercouri G.} and Song, {Jung Hwan} and Hosub Jin and Freeman, {Arthur J.}",

year = "2011",

doi = "10.1117/12.883230",

language = "English (US)",

isbn = "9780819485922",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII",

note = "Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII ; Conference date: 26-04-2011 Through 28-04-2011",

}

Liu, Z, Peters, JA, Zang, C, Cho, NK, Wessels, BW, Johnsen, S, Peter, S, Androulakis, J, Kanatzidis, MG, Song, JH, Jin, H & Freeman, AJ 2011, Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. in Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII., 80180H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8018, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII, Orlando, FL, United States, 4/26/11. https://doi.org/10.1117/12.883230

Tl-based wide gap semiconductor materials for x-ray and gamma ray detection. / Liu, Zhifu; Peters, J. A.; Zang, C. et al.
Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII. 2011. 80180H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

AU - Liu, Zhifu

AU - Peters, J. A.

AU - Zang, C.

AU - Cho, Nam Ki

AU - Wessels, Bruce W.

AU - Johnsen, Simon

AU - Peter, Sebastian

AU - Androulakis, John

AU - Kanatzidis, Mercouri G.

AU - Song, Jung Hwan

AU - Jin, Hosub

AU - Freeman, Arthur J.

PY - 2011

Y1 - 2011

N2 - The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

AB - The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

KW - Photoconductivity

KW - Tl-chalcogenide

KW - Wide gap semiconductor

KW - X-ray detector

UR - http://www.scopus.com/inward/record.url?scp=79960397073&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960397073&partnerID=8YFLogxK

U2 - 10.1117/12.883230

DO - 10.1117/12.883230

M3 - Conference contribution

AN - SCOPUS:79960397073

SN - 9780819485922

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII

T2 - Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII

Y2 - 26 April 2011 through 28 April 2011

ER -

Tl-based wide gap semiconductor materials for x-ray and gamma ray detection

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Keywords

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