Abstract
The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl 2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.
Original language | English (US) |
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Title of host publication | Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII |
Volume | 8018 |
DOIs | |
State | Published - Jul 21 2011 |
Event | Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII - Orlando, FL, United States Duration: Apr 26 2011 → Apr 28 2011 |
Other
Other | Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII |
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Country | United States |
City | Orlando, FL |
Period | 4/26/11 → 4/28/11 |
Keywords
- Photoconductivity
- Tl-chalcogenide
- Wide gap semiconductor
- X-ray detector
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering