Tl incorporation in InSb and lattice contraction of In1-x TlxSb

J. J. Lee*, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Ternary In1-xTlxSb thin films are grown by low pressure metalorganic chemical vapor deposition in the high In composition region. Infrared photoresponse spectra of the In1-xTlxSb epilayers show a clear shift toward a longer wavelength compared to that of InSb. Tl incorporation is confirmed by Auger electron spectroscopy. In contrast to the theoretical expectation, high resolution x-ray diffraction study reveals that the lattice of the In1-xTlxSb epilayers is contracted by the incorporation of Tl. As more Tl is incorporated, the lattice contraction is observed to increase gradually in the experimental range. A possible origin of this phenomenon is discussed. Our experimental results suggest that the Tl incorporation behavior in In1-xTIxSb differs from that of other group III impurities in III antimonides.

Original languageEnglish (US)
Pages (from-to)297-299
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number3
DOIs
StatePublished - Jan 17 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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