Abstract
Ternary In1-xTlxSb thin films are grown by low pressure metalorganic chemical vapor deposition in the high In composition region. Infrared photoresponse spectra of the In1-xTlxSb epilayers show a clear shift toward a longer wavelength compared to that of InSb. Tl incorporation is confirmed by Auger electron spectroscopy. In contrast to the theoretical expectation, high resolution x-ray diffraction study reveals that the lattice of the In1-xTlxSb epilayers is contracted by the incorporation of Tl. As more Tl is incorporated, the lattice contraction is observed to increase gradually in the experimental range. A possible origin of this phenomenon is discussed. Our experimental results suggest that the Tl incorporation behavior in In1-xTIxSb differs from that of other group III impurities in III antimonides.
Original language | English (US) |
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Pages (from-to) | 297-299 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 3 |
DOIs | |
State | Published - Jan 17 2000 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)