TlSbS2: A Semiconductor for Hard Radiation Detection

Wenwen Lin, Haijie Chen, Jiangang He, Constantinos C. Stoumpos, Zhifu Liu, Sanjib Das, Joon Il Kim, Kyle M. McCall, Bruce W. Wessels, Mercouri G. Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We report the quasi-2D semiconductor compound TlSbS2 as a new hard radiation detection material. This compound crystallizes in the triclinic P-1 space group, with a direct bandgap of 1.67 eV and high chemical stability. Thanks to its congruent melting at 484 °C, 1 cm-sized single crystals were grown from stoichiometric melts by the Bridgman method. The device exhibits a high resistivity of >1010 ω·cm, and responds to 22.4 keV Ag X-rays and 5.5 MeV a-particles from 241Am at room temperature. Power-dependent photoluminescence spectra at 17 K reveal that the near-band emission bands peaked at 1.61 and 1.53 eV can be ascribed to donor-acceptor pair recombination. The mobility-lifetime product for electrons along the perpendicular direction with respect to the (0k0) cleavage planes was estimated as 2.4 × 10-6 cm2·V-1, based on spectral response against a-particles. Drift mobility measurements based on a time-of-flight technique using a-particle response reveals an electron mobility of 13.2 ± 2.6 cm2·V-1·s-1. Electronic band structure calculations based on the density functional theory indicate that the lowest effective mass and, thus, the best charge transport are along the (0k0) planes.

Original languageEnglish (US)
Pages (from-to)2891-2898
Number of pages8
JournalACS Photonics
Issue number11
StatePublished - Nov 15 2017


  • crystal growth
  • hard radiation detection
  • photon detection
  • semiconductor detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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