TY - JOUR
T1 - TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature
AU - Lin, Wenwen
AU - Stoumpos, Konstantinos
AU - Liu, Zhifu
AU - Das, Sanjib
AU - Kontsevoi, Oleg Y.
AU - He, Yihui
AU - Malliakas, Christos D.
AU - Chen, Haijie
AU - Wessels, Bruce W.
AU - Kanatzidis, Mercouri G.
N1 - Funding Information:
This work is supported by a Department of Energy NNSA grant (DE-NA0002522). O.Y.K. is supported by DHS-ARI grant 2014-DN-077-ARI086-01 (theoretical calculations). This work made use of the EPIC facility of the NUANCE Center and IMSERC at Northwestern University, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205). Computing resources were provided by the National Energy Research Scientific Computing enter, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/7/19
Y1 - 2017/7/19
N2 - The semiconductor TlSn2I5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH3NH3PbX3 (X = Br, I), TlSn2I5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (∼1010 ω·cm), and robust mechanical properties. Centimeter-size TlSn2I5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10-3 cm2·V-1 and 94 ± 16 cm2·V-1·s-1, respectively. Unlike other halide perovskites, TlSn2I5 shows no signs of ionic polarization under long-term, high-voltage bias.
AB - The semiconductor TlSn2I5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH3NH3PbX3 (X = Br, I), TlSn2I5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (∼1010 ω·cm), and robust mechanical properties. Centimeter-size TlSn2I5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10-3 cm2·V-1 and 94 ± 16 cm2·V-1·s-1, respectively. Unlike other halide perovskites, TlSn2I5 shows no signs of ionic polarization under long-term, high-voltage bias.
KW - crystal growth
KW - halide perovskite
KW - hard radiation detection
KW - photon detection
KW - semiconductor detector
KW - γ-ray
UR - http://www.scopus.com/inward/record.url?scp=85025107765&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85025107765&partnerID=8YFLogxK
U2 - 10.1021/acsphotonics.7b00388
DO - 10.1021/acsphotonics.7b00388
M3 - Article
AN - SCOPUS:85025107765
SN - 2330-4022
VL - 4
SP - 1805
EP - 1813
JO - ACS Photonics
JF - ACS Photonics
IS - 7
ER -