Abstract
The semiconductor TlSn2I5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH3NH3PbX3 (X = Br, I), TlSn2I5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (∼1010 ω·cm), and robust mechanical properties. Centimeter-size TlSn2I5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57Co γ-rays (122 keV), and 241Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10-3 cm2·V-1 and 94 ± 16 cm2·V-1·s-1, respectively. Unlike other halide perovskites, TlSn2I5 shows no signs of ionic polarization under long-term, high-voltage bias.
Original language | English (US) |
---|---|
Pages (from-to) | 1805-1813 |
Number of pages | 9 |
Journal | ACS Photonics |
Volume | 4 |
Issue number | 7 |
DOIs | |
State | Published - Jul 19 2017 |
Funding
This work is supported by a Department of Energy NNSA grant (DE-NA0002522). O.Y.K. is supported by DHS-ARI grant 2014-DN-077-ARI086-01 (theoretical calculations). This work made use of the EPIC facility of the NUANCE Center and IMSERC at Northwestern University, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205). Computing resources were provided by the National Energy Research Scientific Computing enter, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
Keywords
- crystal growth
- halide perovskite
- hard radiation detection
- photon detection
- semiconductor detector
- γ-ray
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biotechnology
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering