Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95 Pt0.05 /Si (100) thin films

Praneet Adusumilli; Lincoln J. Lauhon; David N. Seidman; Conal E. Murray; Ori Avayu; Yossi Rosenwaks

doi:10.1063/1.3099970

Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni_0.95 Pt_0.05 /Si (100) thin films

Praneet Adusumilli, Lincoln J. Lauhon, David N. Seidman, Conal E. Murray, Ori Avayu, Yossi Rosenwaks

Materials Science and Engineering

Research output: Contribution to journal › Article

15 Scopus citations

Abstract

Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni_0.95 Pt_0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni_0.99 Pt_0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni_0.99 Pt_0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni_0.99 Pt_0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.

Original language	English (US)
Article number	113103
Journal	Applied Physics Letters
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.3099970
State	Published - Mar 31 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3099970

Fingerprint Dive into the research topics of 'Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni<sub>0.95</sub> Pt<sub>0.05</sub> /Si (100) thin films'. Together they form a unique fingerprint.

Cite this

Adusumilli, P., Lauhon, L. J., Seidman, D. N., Murray, C. E., Avayu, O., & Rosenwaks, Y. (2009). Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni_0.95 Pt_0.05 /Si (100) thin films. Applied Physics Letters, 94(11), [113103]. https://doi.org/10.1063/1.3099970

@article{286795beb0ca40aab54a998270e69319,

title = "Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95 Pt0.05 /Si (100) thin films",

abstract = "Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95 Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99 Pt0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99 Pt0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni0.99 Pt0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.",

author = "Praneet Adusumilli and Lauhon, {Lincoln J.} and Seidman, {David N.} and Murray, {Conal E.} and Ori Avayu and Yossi Rosenwaks",

year = "2009",

month = mar,

day = "31",

doi = "10.1063/1.3099970",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95 Pt0.05 /Si (100) thin films

AU - Adusumilli, Praneet

AU - Lauhon, Lincoln J.

AU - Seidman, David N.

AU - Murray, Conal E.

AU - Avayu, Ori

AU - Rosenwaks, Yossi

PY - 2009/3/31

Y1 - 2009/3/31

N2 - Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95 Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99 Pt0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99 Pt0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni0.99 Pt0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.

AB - Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95 Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99 Pt0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99 Pt0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni0.99 Pt0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.

UR - http://www.scopus.com/inward/record.url?scp=63049087465&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63049087465&partnerID=8YFLogxK

U2 - 10.1063/1.3099970

DO - 10.1063/1.3099970

M3 - Article

AN - SCOPUS:63049087465

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 113103

ER -