Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95 Pt0.05 /Si (100) thin films

Praneet Adusumilli; Lincoln J. Lauhon; David N. Seidman; Conal E. Murray; Ori Avayu; Yossi Rosenwaks

doi:10.1063/1.3099970

Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni_0.95 Pt_0.05 /Si (100) thin films

Praneet Adusumilli, Lincoln J. Lauhon, David N. Seidman, Conal E. Murray, Ori Avayu, Yossi Rosenwaks

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni_0.95 Pt_0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni_0.99 Pt_0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni_0.99 Pt_0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni_0.99 Pt_0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.

Original language	English (US)
Article number	113103
Journal	Applied Physics Letters
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.3099970
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3099970

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@article{286795beb0ca40aab54a998270e69319,

title = "Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95 Pt0.05 /Si (100) thin films",

abstract = "Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95 Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99 Pt0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99 Pt0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni0.99 Pt0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.",

author = "Praneet Adusumilli and Lauhon, {Lincoln J.} and Seidman, {David N.} and Murray, {Conal E.} and Ori Avayu and Yossi Rosenwaks",

note = "Funding Information: This research is supported by Semiconductor Research Corporation, Contract No. 1441.001. Atom-probe tomographic measurements were performed at the Northwestern University Center for Atom-Probe Tomography (NUCAPT), which is managed by Research Assistant Professor D. Isheim. The 3D LEAP tomograph was purchased with funding from the NSF-MRI (Grant No. DMR 0420532) and ONR-DURIP (Grant No. N00014-0400798) programs. The FEI dual-beam FIB was used in the EPIC facility of the NUANCE Center at Northwestern University.",

year = "2009",

doi = "10.1063/1.3099970",

language = "English (US)",

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journal = "Applied Physics Letters",

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AU - Lauhon, Lincoln J.

AU - Seidman, David N.

AU - Murray, Conal E.

AU - Avayu, Ori

AU - Rosenwaks, Yossi

N1 - Funding Information: This research is supported by Semiconductor Research Corporation, Contract No. 1441.001. Atom-probe tomographic measurements were performed at the Northwestern University Center for Atom-Probe Tomography (NUCAPT), which is managed by Research Assistant Professor D. Isheim. The 3D LEAP tomograph was purchased with funding from the NSF-MRI (Grant No. DMR 0420532) and ONR-DURIP (Grant No. N00014-0400798) programs. The FEI dual-beam FIB was used in the EPIC facility of the NUANCE Center at Northwestern University.

PY - 2009

Y1 - 2009

N2 - Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95 Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99 Pt0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99 Pt0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni0.99 Pt0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.

AB - Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95 Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison's type-B regime, is found after silicidation to form (Ni0.99 Pt0.01) Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99 Pt0.01) Si/Si (100) interface, which may be responsible for the increased resistance of (Ni0.99 Pt0.01) Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.

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