We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is ∼5 V with a differential resistance of ∼40 . The peak emission wavelength redshifts ∼1 nm at high injection currents.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)