Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

A. Yasan*, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

106 Scopus citations

Abstract

We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is ∼5 V with a differential resistance of ∼40 . The peak emission wavelength redshifts ∼1 nm at high injection currents.

Original languageEnglish (US)
Pages (from-to)801-802
Number of pages2
JournalApplied Physics Letters
Volume81
Issue number5
DOIs
StatePublished - Jul 29 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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