Topological oxide insulator in cubic perovskite structure

Hosub Jin*, Sonny H. Rhim, Jino Im, Arthur J. Freeman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6porbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases.

Original languageEnglish (US)
Article number1651
JournalScientific reports
Volume3
DOIs
StatePublished - Apr 11 2013

Funding

Support from the U.S. DOE under Grant No.DE-FG02-88ER45372 is gratefully acknowledged.

ASJC Scopus subject areas

  • General

Fingerprint

Dive into the research topics of 'Topological oxide insulator in cubic perovskite structure'. Together they form a unique fingerprint.

Cite this