Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices

Romain Chevallier; Abbas Haddadi; Manijeh Razeghi

doi:10.1016/j.sse.2017.06.013

Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices

Romain Chevallier, Abbas Haddadi, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, we demonstrate 12 × 12 µm² high-performance, dual-band, long-wavelength infrared (LWIR) photodetectors based on InAs/GaSb/AlSb type-II superlattices. The structure consists of two back-to-back heterojunction photodiodes with 2 µm-thick p-doped absorption regions. High quality dry etching combined with SiO₂ passivation results in a surface resistivity value of 7.9 × 10⁵ Ω cm for the longer (red) channel and little degradation of the electrical performance. The device reaches dark current density values of 4.5 × 10⁻⁴ A/cm² for the longer (red) and 1.3 × 10⁻⁴ A/cm² for the shorter (blue) LWIR channels at quantum efficiency saturation. It has 50% cut-off wavelengths of 8.3 and 11.2 µm for the blue and red channel, respectively, at 77 K in back-side illumination configuration and exhibits quantum efficiencies of 37% and 29%, respectively. This results in specific detectivity values of 2.5 × 10¹¹ cm·Hz^1/2/W and 1.3 × 10¹¹ cm·Hz^1/2/W at 77 K.

Original language	English (US)
Pages (from-to)	51-54
Number of pages	4
Journal	Solid-State Electronics
Volume	136
DOIs	https://doi.org/10.1016/j.sse.2017.06.013
State	Published - Oct 2017

Keywords

Infrared imaging
Photodetectors
Photodiodes
Solid state detectors
Type-II superlattices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2017.06.013

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title = "Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices",

abstract = "In this study, we demonstrate 12 × 12 µm2 high-performance, dual-band, long-wavelength infrared (LWIR) photodetectors based on InAs/GaSb/AlSb type-II superlattices. The structure consists of two back-to-back heterojunction photodiodes with 2 µm-thick p-doped absorption regions. High quality dry etching combined with SiO2 passivation results in a surface resistivity value of 7.9 × 105 Ω cm for the longer (red) channel and little degradation of the electrical performance. The device reaches dark current density values of 4.5 × 10−4 A/cm2 for the longer (red) and 1.3 × 10−4 A/cm2 for the shorter (blue) LWIR channels at quantum efficiency saturation. It has 50\% cut-off wavelengths of 8.3 and 11.2 µm for the blue and red channel, respectively, at 77 K in back-side illumination configuration and exhibits quantum efficiencies of 37\% and 29\%, respectively. This results in specific detectivity values of 2.5 × 1011 cm·Hz1/2/W and 1.3 × 1011 cm·Hz1/2/W at 77 K.",

keywords = "Infrared imaging, Photodetectors, Photodiodes, Solid state detectors, Type-II superlattices",

author = "Romain Chevallier and Abbas Haddadi and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = oct,

doi = "10.1016/j.sse.2017.06.013",

language = "English (US)",

volume = "136",

pages = "51--54",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices

AU - Chevallier, Romain

AU - Haddadi, Abbas

AU - Razeghi, Manijeh

PY - 2017/10

Y1 - 2017/10

N2 - In this study, we demonstrate 12 × 12 µm2 high-performance, dual-band, long-wavelength infrared (LWIR) photodetectors based on InAs/GaSb/AlSb type-II superlattices. The structure consists of two back-to-back heterojunction photodiodes with 2 µm-thick p-doped absorption regions. High quality dry etching combined with SiO2 passivation results in a surface resistivity value of 7.9 × 105 Ω cm for the longer (red) channel and little degradation of the electrical performance. The device reaches dark current density values of 4.5 × 10−4 A/cm2 for the longer (red) and 1.3 × 10−4 A/cm2 for the shorter (blue) LWIR channels at quantum efficiency saturation. It has 50% cut-off wavelengths of 8.3 and 11.2 µm for the blue and red channel, respectively, at 77 K in back-side illumination configuration and exhibits quantum efficiencies of 37% and 29%, respectively. This results in specific detectivity values of 2.5 × 1011 cm·Hz1/2/W and 1.3 × 1011 cm·Hz1/2/W at 77 K.

AB - In this study, we demonstrate 12 × 12 µm2 high-performance, dual-band, long-wavelength infrared (LWIR) photodetectors based on InAs/GaSb/AlSb type-II superlattices. The structure consists of two back-to-back heterojunction photodiodes with 2 µm-thick p-doped absorption regions. High quality dry etching combined with SiO2 passivation results in a surface resistivity value of 7.9 × 105 Ω cm for the longer (red) channel and little degradation of the electrical performance. The device reaches dark current density values of 4.5 × 10−4 A/cm2 for the longer (red) and 1.3 × 10−4 A/cm2 for the shorter (blue) LWIR channels at quantum efficiency saturation. It has 50% cut-off wavelengths of 8.3 and 11.2 µm for the blue and red channel, respectively, at 77 K in back-side illumination configuration and exhibits quantum efficiencies of 37% and 29%, respectively. This results in specific detectivity values of 2.5 × 1011 cm·Hz1/2/W and 1.3 × 1011 cm·Hz1/2/W at 77 K.

KW - Infrared imaging

KW - Photodetectors

KW - Photodiodes

KW - Solid state detectors

KW - Type-II superlattices

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M3 - Article

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SN - 0038-1101

VL - 136

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JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices

Abstract

Keywords

ASJC Scopus subject areas

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