Toward realizing high power semiconductor terahertz laser sources at room temperature

Manijeh Razeghi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The terahertz (THz) spectral range offers promising applications in science, industry, and military. THz penetration through nonconductors (fabrics, wood, plastic) enables a more efficient way of performing security checks (for example at airports), as illegal drugs and explosives could be detected. Being a non-ionizing radiation, THz radiation is environment-friendly enabling a safer analysis environment than conventional X-ray based techniques. However, the lack of a compact room temperature THz laser source greatly hinders mass deployment of THz systems in security check points and medical centers. In the past decade, tremendous development has been made in GaAs/AlGaAs based THz Quantum Cascade Laser (QCLs), with maximum operating temperatures close to 200 K (without magnetic field). However, higher temperature operation is severely limited by a small LO-phonon energy (∼ 36 meV) in this material system. With a much larger LO-phonon energy of ∼ 90 meV, III-Nitrides are promising candidates for room temperature THz lasers. However, realizing high quality material for GaN-based intersubband devices presents a significant challenge. Advances with this approach will be presented. Alternatively, recent demonstration of InP based mid-infrared QCLs with extremely high peak power of 120 W at room temperature opens up the possibility of producing high power THz emission with difference frequency generation through two mid-infrared wavelengths.

Original languageEnglish (US)
Title of host publicationTerahertz Physics, Devices, and Systems V
Subtitle of host publicationAdvance Applications in Industry and Defense
Volume8023
DOIs
StatePublished - Sep 19 2011
EventTerahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense - Orlando, FL, United States
Duration: Apr 25 2011Apr 26 2011

Other

OtherTerahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
CountryUnited States
CityOrlando, FL
Period4/25/114/26/11

Keywords

  • Difference frequency generation
  • III-nitride
  • Quantum cascade lasers
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Toward realizing high power semiconductor terahertz laser sources at room temperature'. Together they form a unique fingerprint.

Cite this