Towards a new quantum wire structure realizable by double cleaved-edge overgrowth: Characterizing the transfer potential

S. F. Roth*, M. Grayson, M. Bichler, D. Schuh, G. Abstreiter

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Twofold application of the well established cleaved-edge overgrowth technique can achieve an orientation of a quantum wire parallel to the growth axis of a prior grown substrate. Hence a variation of the substrate layers directly transfers the resulting potential modulation to the adjacent quantum wire. The concept of a transfer potential applied to a narrow two-dimensional system is a first step towards such a modulated one-dimesional system. First characterization data from double-cleave structures shows an unexpected appearance of two different electron densities in the wide quantum well of each sample, possibly due to charged centers in the different substrate layers.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages915-916
Number of pages2
Volume772
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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