Towards p × n transverse thermoelectrics: Extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation

Yang Tang, G. Koblmüller, H. Riedl, Matthew A Grayson*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Transverse thermoelectrics promise entirely new strategies for integrated cooling elements for optoelectronics. The recently introduced p × n-type transverse thermoelectric paradigm indicates that the most important step to engineering artificial transverse thermoelectrics is to create alternate p-and n-doped layers with orthogonally oriented anisotropic conductivity. This paper studies an approach to creating extreme anisotropic conductivity in bulk-doped semiconductor thin films via ion implantation. This approach defines an array of parallel conduction channels with photolithographic patterning of an SiO2 mask layer, followed by proton implantation. With a 10 μm channel width and 20 μm pitch, both n-type and p-type Al0.42 Ga0.58As thin films demonstrate a conductivity anisotropy ratio σ /σ⊥ > 104 at room temperature, while the longitudinal resistivity along the channel direction after implantation only increased by a factor of 3.3 1/4 3.6. This approach can be readily adapted to other semiconductor materials for artificial p × n-type transverse thermoelectrics as other applications.

Original languageEnglish (US)
Title of host publicationOptical and Electronic Cooling of Solids
EditorsRichard I. Epstein, Mansoor Sheik-Bahae, Denis V. Seletskiy
PublisherSPIE
Volume9765
ISBN (Electronic)9781510600003
DOIs
StatePublished - Jan 1 2016
EventOptical and Electronic Cooling of Solids - San Francisco, United States
Duration: Feb 17 2016Feb 18 2016

Other

OtherOptical and Electronic Cooling of Solids
CountryUnited States
CitySan Francisco
Period2/17/162/18/16

Keywords

  • Anisotropic In-Plane Conductivity
  • P × n-type transverse thermoelectrics
  • Proton implantation isolation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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