@inproceedings{1b0d23c061974f8fb8edbdd29912b915,
title = "Towards p × n transverse thermoelectrics: Extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation",
abstract = "Transverse thermoelectrics promise entirely new strategies for integrated cooling elements for optoelectronics. The recently introduced p × n-type transverse thermoelectric paradigm indicates that the most important step to engineering artificial transverse thermoelectrics is to create alternate p-and n-doped layers with orthogonally oriented anisotropic conductivity. This paper studies an approach to creating extreme anisotropic conductivity in bulk-doped semiconductor thin films via ion implantation. This approach defines an array of parallel conduction channels with photolithographic patterning of an SiO2 mask layer, followed by proton implantation. With a 10 μm channel width and 20 μm pitch, both n-type and p-type Al0.42 Ga0.58As thin films demonstrate a conductivity anisotropy ratio σ /σ⊥ > 104 at room temperature, while the longitudinal resistivity along the channel direction after implantation only increased by a factor of 3.3 1/4 3.6. This approach can be readily adapted to other semiconductor materials for artificial p × n-type transverse thermoelectrics as other applications.",
keywords = "Anisotropic In-Plane Conductivity, P × n-type transverse thermoelectrics, Proton implantation isolation",
author = "Yang Tang and G. Koblm{\"u}ller and H. Riedl and M. Grayson",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Optical and Electronic Cooling of Solids ; Conference date: 17-02-2016 Through 18-02-2016",
year = "2016",
doi = "10.1117/12.2214448",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Epstein, {Richard I.} and Mansoor Sheik-Bahae and Seletskiy, {Denis V.}",
booktitle = "Optical and Electronic Cooling of Solids",
}