Transient photocurrent measurements in alkali chalcogenide ternary compound semiconductors

Z. Liu; J. A. Peters; H. Li; M. G. Kanatzidis; B. W. Wessels

doi:10.1088/0268-1242/28/1/015022

Transient photocurrent measurements in alkali chalcogenide ternary compound semiconductors

Z. Liu^*, J. A. Peters, H. Li, M. G. Kanatzidis, B. W. Wessels

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The charge transport properties of two alkali metal chalcogenide, semiconductor ternary compounds Cs2Cd3Te4 and Cs2Hg6S7, having potential as efficient high-energy radiation detectors, were investigated. A key property that determines the detector performance is the minority carrier lifetime, which was determined by measurement of photocurrent transients using pulsed laser excitation. The alkali metal chalcogenide semiconductor crystals were grown by a modified Bridgman method. The Cs2Cd3Te4 compound has a minority lifetime of 2.45 μs at 295 K, which is comparable to that of cadmium zinc telluride (CZT). The Cs2Hg6S7 showed charge trapping with decay times of 120 μs. The excellent charge transport properties of Cs2Cd3Te4 indicate that this ternary compound semiconductor should be well suited for gamma radiation detector devices that operate at room temperature.

Original language	English (US)
Article number	015022
Journal	Semiconductor Science and Technology
Volume	28
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/28/1/015022
State	Published - Jan 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/28/1/015022

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@article{022e8a2854904dcaa4e4e21de7ca919b,

title = "Transient photocurrent measurements in alkali chalcogenide ternary compound semiconductors",

abstract = "The charge transport properties of two alkali metal chalcogenide, semiconductor ternary compounds Cs2Cd3Te4 and Cs2Hg6S7, having potential as efficient high-energy radiation detectors, were investigated. A key property that determines the detector performance is the minority carrier lifetime, which was determined by measurement of photocurrent transients using pulsed laser excitation. The alkali metal chalcogenide semiconductor crystals were grown by a modified Bridgman method. The Cs2Cd3Te4 compound has a minority lifetime of 2.45 μs at 295 K, which is comparable to that of cadmium zinc telluride (CZT). The Cs2Hg6S7 showed charge trapping with decay times of 120 μs. The excellent charge transport properties of Cs2Cd3Te4 indicate that this ternary compound semiconductor should be well suited for gamma radiation detector devices that operate at room temperature.",

author = "Z. Liu and Peters, {J. A.} and H. Li and Kanatzidis, {M. G.} and Wessels, {B. W.}",

year = "2013",

month = jan,

doi = "10.1088/0268-1242/28/1/015022",

language = "English (US)",

volume = "28",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Transient photocurrent measurements in alkali chalcogenide ternary compound semiconductors

AU - Liu, Z.

AU - Peters, J. A.

AU - Li, H.

AU - Kanatzidis, M. G.

AU - Wessels, B. W.

PY - 2013/1

Y1 - 2013/1

N2 - The charge transport properties of two alkali metal chalcogenide, semiconductor ternary compounds Cs2Cd3Te4 and Cs2Hg6S7, having potential as efficient high-energy radiation detectors, were investigated. A key property that determines the detector performance is the minority carrier lifetime, which was determined by measurement of photocurrent transients using pulsed laser excitation. The alkali metal chalcogenide semiconductor crystals were grown by a modified Bridgman method. The Cs2Cd3Te4 compound has a minority lifetime of 2.45 μs at 295 K, which is comparable to that of cadmium zinc telluride (CZT). The Cs2Hg6S7 showed charge trapping with decay times of 120 μs. The excellent charge transport properties of Cs2Cd3Te4 indicate that this ternary compound semiconductor should be well suited for gamma radiation detector devices that operate at room temperature.

AB - The charge transport properties of two alkali metal chalcogenide, semiconductor ternary compounds Cs2Cd3Te4 and Cs2Hg6S7, having potential as efficient high-energy radiation detectors, were investigated. A key property that determines the detector performance is the minority carrier lifetime, which was determined by measurement of photocurrent transients using pulsed laser excitation. The alkali metal chalcogenide semiconductor crystals were grown by a modified Bridgman method. The Cs2Cd3Te4 compound has a minority lifetime of 2.45 μs at 295 K, which is comparable to that of cadmium zinc telluride (CZT). The Cs2Hg6S7 showed charge trapping with decay times of 120 μs. The excellent charge transport properties of Cs2Cd3Te4 indicate that this ternary compound semiconductor should be well suited for gamma radiation detector devices that operate at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84872065480&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872065480&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/28/1/015022

DO - 10.1088/0268-1242/28/1/015022

M3 - Article

AN - SCOPUS:84872065480

SN - 0268-1242

VL - 28

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - 015022

ER -

Transient photocurrent measurements in alkali chalcogenide ternary compound semiconductors

Abstract

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