Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

R. Y. Korotkov; M. A. Reshchikov; B. W. Wessels

doi:10.1016/S0921-4526(99)00411-1

Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

R. Y. Korotkov^*, M. A. Reshchikov, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Conference article › peer-review

31 Scopus citations

Abstract

Transient behavior of the 2.3, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN is studied. A non-exponential decay of PL intensity is observed for all three bands after pulsed excitation at low temperature. Transition rates were measured for the three bands. Quantitative analysis of the PL decay indicates that all three bands are associated with donor acceptor pair (DAP) transitions involving a shallow donor and three acceptor states of different origins. The transition rate decreases with decreasing band energy or increasing thermal ionization energy of the acceptor.

Original language	English (US)
Pages (from-to)	80-83
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00411-1
State	Published - Dec 15 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999

Funding

This work was supported by the National Science Foundation through the GOALI Program, under grant number ECS-9705134.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00411-1

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title = "Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy",

abstract = "Transient behavior of the 2.3, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN is studied. A non-exponential decay of PL intensity is observed for all three bands after pulsed excitation at low temperature. Transition rates were measured for the three bands. Quantitative analysis of the PL decay indicates that all three bands are associated with donor acceptor pair (DAP) transitions involving a shallow donor and three acceptor states of different origins. The transition rate decreases with decreasing band energy or increasing thermal ionization energy of the acceptor.",

author = "Korotkov, {R. Y.} and Reshchikov, {M. A.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported by the National Science Foundation through the GOALI Program, under grant number ECS-9705134. ; Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

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day = "15",

doi = "10.1016/S0921-4526(99)00411-1",

language = "English (US)",

volume = "273-274",

pages = "80--83",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

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TY - JOUR

T1 - Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

AU - Korotkov, R. Y.

AU - Reshchikov, M. A.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported by the National Science Foundation through the GOALI Program, under grant number ECS-9705134.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - Transient behavior of the 2.3, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN is studied. A non-exponential decay of PL intensity is observed for all three bands after pulsed excitation at low temperature. Transition rates were measured for the three bands. Quantitative analysis of the PL decay indicates that all three bands are associated with donor acceptor pair (DAP) transitions involving a shallow donor and three acceptor states of different origins. The transition rate decreases with decreasing band energy or increasing thermal ionization energy of the acceptor.

AB - Transient behavior of the 2.3, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN is studied. A non-exponential decay of PL intensity is observed for all three bands after pulsed excitation at low temperature. Transition rates were measured for the three bands. Quantitative analysis of the PL decay indicates that all three bands are associated with donor acceptor pair (DAP) transitions involving a shallow donor and three acceptor states of different origins. The transition rate decreases with decreasing band energy or increasing thermal ionization energy of the acceptor.

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U2 - 10.1016/S0921-4526(99)00411-1

DO - 10.1016/S0921-4526(99)00411-1

M3 - Conference article

AN - SCOPUS:0033356075

SN - 0921-4526

VL - 273-274

SP - 80

EP - 83

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

Abstract

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ASJC Scopus subject areas

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