Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

R. Y. Korotkov*, M. A. Reshchikov, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations

Abstract

Transient behavior of the 2.3, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN is studied. A non-exponential decay of PL intensity is observed for all three bands after pulsed excitation at low temperature. Transition rates were measured for the three bands. Quantitative analysis of the PL decay indicates that all three bands are associated with donor acceptor pair (DAP) transitions involving a shallow donor and three acceptor states of different origins. The transition rate decreases with decreasing band energy or increasing thermal ionization energy of the acceptor.

Original languageEnglish (US)
Pages (from-to)80-83
Number of pages4
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
StatePublished - Dec 15 1999
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: Jul 26 1999Jul 30 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy'. Together they form a unique fingerprint.

Cite this