Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

R. Y. Korotkov*, M. A. Reshchikov, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations

Fingerprint Dive into the research topics of 'Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy