Transition from single junction to double junction behaviour in SISIS-type Nb-based devices

I. P. Nevirkovets*, J. E. Evetts, M. G. Blamire

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Three-terminal double-junction Nb/Al-AlOx-Nb/Al-AlOx-Nb tunnel devices with a thin (≈ 13 nm) Nb/Al middle layer have been investigated. Strong interaction between the two junctions has been observed, as a result at zero voltage the system can behave like a single junction with one critical current. This state is stable and can be characterized by identical phase distributions for the two junctions. At some value of the applied magnetic field, a transition to another state occurs, in which the individual junctions behave relatively independently.

Original languageEnglish (US)
Pages (from-to)119-126
Number of pages8
JournalPhysics Letters A
Volume187
Issue number1
DOIs
StatePublished - Apr 4 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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