TY - JOUR
T1 - Transition from single junction to double junction behaviour in SISIS-type Nb-based devices
AU - Nevirkovets, I. P.
AU - Evetts, J. E.
AU - Blamire, M. G.
PY - 1994/4/4
Y1 - 1994/4/4
N2 - Three-terminal double-junction Nb/Al-AlOx-Nb/Al-AlOx-Nb tunnel devices with a thin (≈ 13 nm) Nb/Al middle layer have been investigated. Strong interaction between the two junctions has been observed, as a result at zero voltage the system can behave like a single junction with one critical current. This state is stable and can be characterized by identical phase distributions for the two junctions. At some value of the applied magnetic field, a transition to another state occurs, in which the individual junctions behave relatively independently.
AB - Three-terminal double-junction Nb/Al-AlOx-Nb/Al-AlOx-Nb tunnel devices with a thin (≈ 13 nm) Nb/Al middle layer have been investigated. Strong interaction between the two junctions has been observed, as a result at zero voltage the system can behave like a single junction with one critical current. This state is stable and can be characterized by identical phase distributions for the two junctions. At some value of the applied magnetic field, a transition to another state occurs, in which the individual junctions behave relatively independently.
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U2 - 10.1016/0375-9601(94)90876-1
DO - 10.1016/0375-9601(94)90876-1
M3 - Article
AN - SCOPUS:0001531485
SN - 0375-9601
VL - 187
SP - 119
EP - 126
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 1
ER -