Transition metal-catalysed molecular n-doping of organic semiconductors

Han Guo, Chi Yuan Yang, Xianhe Zhang, Alessandro Motta, Kui Feng, Yu Xia, Yongqiang Shi, Ziang Wu, Kun Yang, Jianhua Chen, Qiaogan Liao, Yumin Tang, Huiliang Sun, Han Young Woo, Simone Fabiano, Antonio Facchetti*, Xugang Guo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

106 Scopus citations


Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices1–9. N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (η) of less than 10%1,10. An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability1,5,6,9,11, which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd2(dba)3) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased η in a much shorter doping time and high electrical conductivities (above 100 S cm−1; ref. 12). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications12, 13.

Original languageEnglish (US)
Pages (from-to)67-73
Number of pages7
Issue number7883
StatePublished - Nov 4 2021

ASJC Scopus subject areas

  • General


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