TY - JOUR
T1 - Transparent-flexible thermoelectric module from In/Ga co-doped ZnO thin films
AU - Vora-ud, Athorn
AU - Tuan Thanh Pham, Anh
AU - Cao Truong, Dai
AU - Thoawankeaw, Somporn
AU - Thi Lai, Hoa
AU - Bao Nguyen Le, Thu
AU - Tran, Nhat Minh Quang
AU - Insawang, Mekhala
AU - Muthitamongkol, Pennapa
AU - Horprathum, Mati
AU - Kumar, Manish
AU - Park, Sungkyun
AU - Jeffrey Snyder, Gerald
AU - Seetawan, Tosawat
AU - Bach Phan, Thang
N1 - Funding Information:
This work was financially supported by the National Research Council of Thailand (NRCT) and Thailand Research Fund (TRF) through Research Grant for New Scholar (RGNS 65-174), Program Management Unit for Human Resources & Institutional Development Research and Innovation (PMU-B) (B16F650001), partially by National of Korea (NRF- 2021M3H4A6A02045432), and financially supported by National Foundation of Science and Technology Development of Vietnam (NAFOSTED - 103.02-2021.54).
Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/6/1
Y1 - 2023/6/1
N2 - Transparent-flexible thermoelectric thin films have immense potential as power supplies for future small-sized consumer electronics, the internet of things, and wearable devices. Here, we report the thermoelectric properties of dual Ga and In doped ZnO films (IGZO) deposited on a polyimide substrate with post-thermal treatment in vacuum along with fabricating 4-unileg flexible IGZO thermoelectric devices. All the as-deposited and annealed IGZO films are the preferred (0 0 2) orientation and under tensile stress. The post-thermal treatment controls the dopant substitution/diffusion in the host ZnO lattice affecting the film crystallinity, residual stress, and thermoelectric properties. Among the films, the IGZO film annealed at 250 °C has the best power factor of 16.9 μWm−1K−2 with the largest crystal size, lowest tensile stress, highest carrier concentration, and lowest density-of-state effective mass. The practical application of flexible IGZO films was also reported via a 4-unileg-IGZO films thermoelectric module, which achieved an output power about 3.2 nW at ΔT = 120 K.
AB - Transparent-flexible thermoelectric thin films have immense potential as power supplies for future small-sized consumer electronics, the internet of things, and wearable devices. Here, we report the thermoelectric properties of dual Ga and In doped ZnO films (IGZO) deposited on a polyimide substrate with post-thermal treatment in vacuum along with fabricating 4-unileg flexible IGZO thermoelectric devices. All the as-deposited and annealed IGZO films are the preferred (0 0 2) orientation and under tensile stress. The post-thermal treatment controls the dopant substitution/diffusion in the host ZnO lattice affecting the film crystallinity, residual stress, and thermoelectric properties. Among the films, the IGZO film annealed at 250 °C has the best power factor of 16.9 μWm−1K−2 with the largest crystal size, lowest tensile stress, highest carrier concentration, and lowest density-of-state effective mass. The practical application of flexible IGZO films was also reported via a 4-unileg-IGZO films thermoelectric module, which achieved an output power about 3.2 nW at ΔT = 120 K.
KW - Flexible-transparent thermoelectric
KW - Seebeck coefficient
KW - Thermal sensors
KW - Thermopower factor
KW - ZnO thin films
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U2 - 10.1016/j.cej.2023.142954
DO - 10.1016/j.cej.2023.142954
M3 - Article
AN - SCOPUS:85153263025
SN - 1385-8947
VL - 465
JO - Chemical Engineering Journal
JF - Chemical Engineering Journal
M1 - 142954
ER -