Transparent Nanowire Transistors and Methods for Fabricating Same

Tobin Marks (Inventor)

Research output: Patent


Transparent Nanowire Transistors NU 2007-069 Inventors Tobin Marks* David Janes Sanghyun Ju Peter Ye Chongwu Zhou Antonio Facchetti Short Description Optically transparent and mechanically flexible electronic circuitry for next-generation display technologies #semiconductor #transistor # nanotechnology #fabrication #materials #nanowire Abstract Northwestern University scientists have developed nanowire transistors that are transparent and flexible. These novel transistors are essential for the development of different types of next-generation displays, which will be more energy efficient and provide enhanced capabilities (e.g. smart windows). In addition, transparent nanowire transistors (TNTs) are also expected to enable production of flexible electronic devices, including implantable medical devices. In laboratory tests, the nanowire transistors were fabricated on both glass and plastic substrates, which was made possible by the low processing temperature required for this novel type of transistor. When compared to the thin film transistors (TFTs), TNTs perform equally well under laboratory conditions. The advantageous characteristics of TNTs will make them the preferred transistor for many future electronic devices. Applications o Next-generation displays (e.g. AMOLED) o Transparent and conformable electronics for consumer goods and medical devices Advantages o Low temperature processing o High optical transparency o High mechanical flexibility Publications Ju S, Faccetti A, Xuan Yi, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB. Fabtrication of fully transparent nanowire transistors for transparent and flexible electronics (2007). Nature Nanotechnology. 2: 378-384. IP Status Issued US patent number 7,910,932. International patent application has been filed. Marketing Contact Allan Nader, PhD Invention Manager (e) (p) 847.491.4456
Original languageEnglish
Patent number7910932
StatePublished - Feb 27 2009


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