Abstract
The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 10 20 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.
Original language | English (US) |
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Title of host publication | Nanoscale Photonic and Cell Technologies for Photovoltaics II |
Volume | 7411 |
DOIs | |
State | Published - Oct 19 2009 |
Event | Nanoscale Photonic and Cell Technologies for Photovoltaics II - San Diego, CA, United States Duration: Aug 2 2009 → Aug 4 2009 |
Other
Other | Nanoscale Photonic and Cell Technologies for Photovoltaics II |
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Country/Territory | United States |
City | San Diego, CA |
Period | 8/2/09 → 8/4/09 |
Keywords
- Doping mechanism
- Transparent conducting oxides
- Zinc oxide nanostructures
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics