Transport and structural characterization of solution-processable doped zno nanowires

Rodrigo Noriega*, Ludwig Goris, Jonathan Rivnay, Jonathan Scholl, Linda M. Thompson, Aaron C. Palke, Jonathan F. Stebbins, Alberto Salleo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The use of ZnO nanowires has become a widespread topic of interest in optoelectronics. In order to correctly assess the quality, functionality, and possible applications of such nanostructures it is important to accurately understand their electrical and optical properties. Aluminum- and gallium-doped crystalline ZnO nanowires were synthesized using a low-temperature solution-based process, achieving dopant densities of the order of 10 20 cm-3. A non-contact optical technique, photothermal deflection spectroscopy, is used to characterize ensembles of ZnO nanowires. By modeling the free charge carrier absorption as a Drude metal, we are able to calculate the free carrier density and mobility. Determining the location of the dopant atoms in the ZnO lattice is important to determine the doping mechanisms of the ZnO nanowires. Solid-state NMR is used to distinguish between coordination environments of the dopant atoms.

Original languageEnglish (US)
Title of host publicationNanoscale Photonic and Cell Technologies for Photovoltaics II
Volume7411
DOIs
StatePublished - Oct 19 2009
EventNanoscale Photonic and Cell Technologies for Photovoltaics II - San Diego, CA, United States
Duration: Aug 2 2009Aug 4 2009

Other

OtherNanoscale Photonic and Cell Technologies for Photovoltaics II
Country/TerritoryUnited States
CitySan Diego, CA
Period8/2/098/4/09

Keywords

  • Doping mechanism
  • Transparent conducting oxides
  • Zinc oxide nanostructures

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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