Transport properties in weak and strong localization regime of Nb0.53Ti0.47/Ge superlattices

B. Y. Jin*, Y. H. Shen, H. Q. Yang, H. K. Wong, J. E. Hilliard, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Multilayer Nb0.53Ti0.47/Ge superlattices with varying Nb0.53Ti0.47 and Ge layer thickness were sputter deposited on sapphire substrates at 200°C. The physical properties of these superlattices depend on the Nb0.53Ti0.47 layer thickness which is in turn related to the degree of disorder of the metal layer. The spectrum of samples can be subdivided roughly into three regions according to their different transport properties—a superconducting region, a weak localization region and a strong localization region. The sheet resistance, R of films in the weak localization region is in the range of 300ω<R<5kω and they exhibit a logarithmic temperature dependence, R(T)lnT at low temperatures. One film in the strong localization region, with R= 220kω, showed an exponential temperature dependence of the resistance, R exp 1/√T. Negative (positive) magnetoresistance is observed for strongly (weakly) localized samples at low field. The high field magnetoresistance showed a linear dependence in lnH, except for the parallel magnetoresistance of the strongly localized film; the latter had approximately an H2 dependence. The magnetoresistance is anisotropic for both the weakly and strongly localized films with the perpendicular magnetoresistance always larger than the parallel values. The weak localization to strong localization transition is consistent with the theoretically predicted mobility edge near R≂ħ/0.12e2≅30kω.

Original languageEnglish (US)
Pages (from-to)401-406
Number of pages6
JournalSuperlattices and Microstructures
Volume1
Issue number5
DOIs
StatePublished - 1985

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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