Transport properties of doped CsBi4Te6 thermoelectric materials

Paul W. Brazis*, Melissa Rocci, Duck Young Chung, Mercouri Kanatzidis, Carl R. Kannewurf

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.

Original languageEnglish (US)
Pages (from-to)75-80
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume545
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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