Transport properties of doped CsBi4Te6 thermoelectric materials

Paul W. Brazis; Melissa Rocci; Duck Young Chung; Mercouri Kanatzidis; Carl R. Kannewurf

Transport properties of doped CsBi₄Te₆ thermoelectric materials

Paul W. Brazis^*, Melissa Rocci, Duck Young Chung, Mercouri Kanatzidis, Carl R. Kannewurf

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi₄Te₆ was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi₄Te₆ samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K² at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.

Original language	English (US)
Pages (from-to)	75-80
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	545
State	Published - Jan 1 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Transport properties of doped CsBi4Te6 thermoelectric materials",

abstract = "In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.",

author = "Brazis, {Paul W.} and Melissa Rocci and Chung, {Duck Young} and Mercouri Kanatzidis and Kannewurf, {Carl R.}",

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T1 - Transport properties of doped CsBi4Te6 thermoelectric materials

AU - Brazis, Paul W.

AU - Rocci, Melissa

AU - Chung, Duck Young

AU - Kanatzidis, Mercouri

AU - Kannewurf, Carl R.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.

AB - In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.

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M3 - Article

AN - SCOPUS:0032591248

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VL - 545

SP - 75

EP - 80

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Transport properties of doped CsBi₄Te₆ thermoelectric materials

Abstract

ASJC Scopus subject areas

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