In previous investigations we have introduced a variety of new chalcogenide-based materials with promising properties for thermoelectric applications. The chalcogenide CsBi4Te6 was previously reported to have a high ZT product with a maximum value at 260K. In order to improve this value, a series of doped CsBi4Te6 samples has been synthesized. Current doping studies have been very encouraging, with one sample found to have a maximum power factor of 51.5 μW/cm·K2 at 184 K. This paper reports on material characterization studies through the usual transport measurements to determine optimum doping concentration for various dopants.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials