Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13

P. W. Brazis; J. R. Ireland; M. A. Lane; T. Kyratsi; D. Y. Chung; Mercouri Kanatzidis; C. R. Kannewurf

Transport properties of the doped thermoelectric material K₂Bi_8-xSb_xSe₁₃

P. W. Brazis^*, J. R. Ireland, M. A. Lane, T. Kyratsi, D. Y. Chung, Mercouri Kanatzidis, C. R. Kannewurf

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K₂Bi₈Se₁₃ has been previously reported. The results indicated that this material should be investigated further for possible thermoelectric applications. β-K₂Bi₈Se₁₃ exhibits excellent electrical conductivity values at room temperature while maintaining high Seebeck coefficients. In this work, the optimization of the compound β-K₂Bi₈Se₁₃ is continued by the introduction of varying concentrations of several different dopants. The value of x in K₂Bi_8-x Sb_xSe₁₃ was varied in order to find the composition with minimum thermal conductivity. Where possible, transport measurements were carried out on both single crystal and polycrystalline ingot material. From these data, the trends in the key parameters were identified for optimizing the power factor and figure of merit.

Original language	English (US)
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	4
State	Published - Jan 1 2001
Event	IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering

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@article{1577f3588b34490ebc366b8d54bca2d6,

title = "Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13",

abstract = "The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K2Bi8Se13 has been previously reported. The results indicated that this material should be investigated further for possible thermoelectric applications. β-K2Bi8Se13 exhibits excellent electrical conductivity values at room temperature while maintaining high Seebeck coefficients. In this work, the optimization of the compound β-K2Bi8Se13 is continued by the introduction of varying concentrations of several different dopants. The value of x in K2Bi8-x SbxSe13 was varied in order to find the composition with minimum thermal conductivity. Where possible, transport measurements were carried out on both single crystal and polycrystalline ingot material. From these data, the trends in the key parameters were identified for optimizing the power factor and figure of merit.",

author = "Brazis, {P. W.} and Ireland, {J. R.} and Lane, {M. A.} and T. Kyratsi and Chung, {D. Y.} and Mercouri Kanatzidis and Kannewurf, {C. R.}",

year = "2001",

month = jan,

day = "1",

language = "English (US)",

volume = "4",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Symposium on Circuits and Systems (ISCAS 2001) ; Conference date: 06-05-2001 Through 09-05-2001",

}

TY - JOUR

T1 - Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13

AU - Brazis, P. W.

AU - Ireland, J. R.

AU - Lane, M. A.

AU - Kyratsi, T.

AU - Chung, D. Y.

AU - Kanatzidis, Mercouri

AU - Kannewurf, C. R.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K2Bi8Se13 has been previously reported. The results indicated that this material should be investigated further for possible thermoelectric applications. β-K2Bi8Se13 exhibits excellent electrical conductivity values at room temperature while maintaining high Seebeck coefficients. In this work, the optimization of the compound β-K2Bi8Se13 is continued by the introduction of varying concentrations of several different dopants. The value of x in K2Bi8-x SbxSe13 was varied in order to find the composition with minimum thermal conductivity. Where possible, transport measurements were carried out on both single crystal and polycrystalline ingot material. From these data, the trends in the key parameters were identified for optimizing the power factor and figure of merit.

AB - The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K2Bi8Se13 has been previously reported. The results indicated that this material should be investigated further for possible thermoelectric applications. β-K2Bi8Se13 exhibits excellent electrical conductivity values at room temperature while maintaining high Seebeck coefficients. In this work, the optimization of the compound β-K2Bi8Se13 is continued by the introduction of varying concentrations of several different dopants. The value of x in K2Bi8-x SbxSe13 was varied in order to find the composition with minimum thermal conductivity. Where possible, transport measurements were carried out on both single crystal and polycrystalline ingot material. From these data, the trends in the key parameters were identified for optimizing the power factor and figure of merit.

UR - http://www.scopus.com/inward/record.url?scp=0035020642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035020642&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035020642

VL - 4

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

SN - 0271-4310

T2 - IEEE International Symposium on Circuits and Systems (ISCAS 2001)

Y2 - 6 May 2001 through 9 May 2001

ER -