Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Chunyi Huang, Didem Dede, Nicholas Morgan, Valerio Piazza, Xiaobing Hu, Anna Fontcuberta i Morral*, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Selective area epitaxy is a promising approach to define nanowire networks for topological quantum computing. However, it is challenging to concurrently engineer nanowire morphology, for carrier confinement, and precision doping, to tune carrier density. We report a strategy to promote Si dopant incorporation and suppress dopant diffusion in remote doped InGaAs nanowires templated by GaAs nanomembrane networks. Growth of a dilute AlGaAs layer following doping of the GaAs nanomembrane induces incorporation of Si that otherwise segregates to the growth surface, enabling precise control of the spacing between the Si donors and the undoped InGaAs channel; a simple model captures the influence of Al on the Si incorporation rate. Finite element modeling confirms that a high electron density is produced in the channel.

Original languageEnglish (US)
Pages (from-to)6284-6291
Number of pages8
JournalNano letters
Volume23
Issue number14
DOIs
StatePublished - Jul 26 2023

Keywords

  • atom probe tomography
  • modeling
  • nanowire growth
  • remote doping

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)

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