Traveling wave electro-optic phase modulators based on intrinsically polar self-assembled chromophoric superlattices

Y. G. Zhao; A. Wu; H. L. Lu; S. Chang; W. K. Lu; S. T. Ho; M. E. Van Der Boom; T. J. Marks

doi:10.1063/1.1389514

Traveling wave electro-optic phase modulators based on intrinsically polar self-assembled chromophoric superlattices

Y. G. Zhao^*, A. Wu, H. L. Lu, S. Chang, W. K. Lu, S. T. Ho, M. E. Van Der Boom, T. J. Marks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Traveling-wave electro-optic modulators based on chromophoric self-assembled superlattices (SASs) possessing intrinsically polar microstructures have been designed and fabricated. Although the thickness of the SAS layer is only ∼ 150 nm, a π-phase shift is clearly observed. From the measured V_π value, the effective electro-optic coefficient of the SAS film is determined to be ∼ 21.8 pm/V at an input wavelength of 1064 nm.

Original language	English (US)
Pages (from-to)	587-589
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	5
DOIs	https://doi.org/10.1063/1.1389514
State	Published - Jul 30 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Traveling-wave electro-optic modulators based on chromophoric self-assembled superlattices (SASs) possessing intrinsically polar microstructures have been designed and fabricated. Although the thickness of the SAS layer is only ∼ 150 nm, a π-phase shift is clearly observed. From the measured Vπ value, the effective electro-optic coefficient of the SAS film is determined to be ∼ 21.8 pm/V at an input wavelength of 1064 nm.",

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AU - Zhao, Y. G.

AU - Wu, A.

AU - Lu, H. L.

AU - Chang, S.

AU - Lu, W. K.

AU - Ho, S. T.

AU - Van Der Boom, M. E.

AU - Marks, T. J.

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AB - Traveling-wave electro-optic modulators based on chromophoric self-assembled superlattices (SASs) possessing intrinsically polar microstructures have been designed and fabricated. Although the thickness of the SAS layer is only ∼ 150 nm, a π-phase shift is clearly observed. From the measured Vπ value, the effective electro-optic coefficient of the SAS film is determined to be ∼ 21.8 pm/V at an input wavelength of 1064 nm.

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