Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

Mark Dong*, Niall M. Mangan, J. Nathan Kutz, Steven T. Cundiff, Herbert G. Winful

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We present a traveling wave model for a semiconductor diode laser based on quantum wells. The gain model is carefully derived from first principles and implemented with as few phenomenological constants as possible. The transverse energies of the quantum well confined electrons are discretized to automatically capture the effects of spectral and spatial hole burning, the gain asymmetry, and the linewidth enhancement factor. We apply this model to semiconductor optical amplifiers and single-section phase-locked lasers. We are able to reproduce the experimental results. The calculated frequency modulated comb shows potential to be a compact, chip-scale comb source without additional external components.

Original languageEnglish (US)
Article number8049451
JournalIEEE Journal of Quantum Electronics
Volume53
Issue number6
DOIs
StatePublished - Dec 2017

Keywords

  • Semiconductor diode lasers
  • frequency combs
  • mode locked lasers
  • quantum well lasers
  • traveling wave simulations

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers'. Together they form a unique fingerprint.

Cite this