Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

Mark Dong; Niall M. Mangan; J. Nathan Kutz; Steven T. Cundiff; Herbert G. Winful

doi:10.1109/JQE.2017.2756641

Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

Mark Dong^*, Niall M. Mangan, J. Nathan Kutz, Steven T. Cundiff, Herbert G. Winful

^*Corresponding author for this work

Engineering Sciences and Applied Mathematics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We present a traveling wave model for a semiconductor diode laser based on quantum wells. The gain model is carefully derived from first principles and implemented with as few phenomenological constants as possible. The transverse energies of the quantum well confined electrons are discretized to automatically capture the effects of spectral and spatial hole burning, the gain asymmetry, and the linewidth enhancement factor. We apply this model to semiconductor optical amplifiers and single-section phase-locked lasers. We are able to reproduce the experimental results. The calculated frequency modulated comb shows potential to be a compact, chip-scale comb source without additional external components.

Original language	English (US)
Article number	8049451
Journal	IEEE Journal of Quantum Electronics
Volume	53
Issue number	6
DOIs	https://doi.org/10.1109/JQE.2017.2756641
State	Published - Dec 2017

Keywords

Semiconductor diode lasers
frequency combs
mode locked lasers
quantum well lasers
traveling wave simulations

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2017.2756641

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@article{676f6f6369e44533b074a912824f7ac9,

title = "Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers",

abstract = "We present a traveling wave model for a semiconductor diode laser based on quantum wells. The gain model is carefully derived from first principles and implemented with as few phenomenological constants as possible. The transverse energies of the quantum well confined electrons are discretized to automatically capture the effects of spectral and spatial hole burning, the gain asymmetry, and the linewidth enhancement factor. We apply this model to semiconductor optical amplifiers and single-section phase-locked lasers. We are able to reproduce the experimental results. The calculated frequency modulated comb shows potential to be a compact, chip-scale comb source without additional external components.",

keywords = "Semiconductor diode lasers, frequency combs, mode locked lasers, quantum well lasers, traveling wave simulations",

author = "Mark Dong and Mangan, {Niall M.} and Kutz, {J. Nathan} and Cundiff, {Steven T.} and Winful, {Herbert G.}",

note = "Funding Information: Manuscript received July 3, 2017; revised September 14, 2017; accepted September 20, 2017. Date of publication September 26, 2017; date of current version October 5, 2017. This work was supported in part by the Defense Advanced Research Projects Agency through the SCOUT program and in part through computational resources and services provided by Advanced Research Computing at the University of Michigan, Ann Arbor. (Corresponding author: Mark Dong.) M. Dong, S. T. Cundiff, and H. G. Winful are with the University of Michigan, Ann Arbor, MI 48109 USA (e-mail: markdong@umich.edu; cundiff@umich.edu; arrays@umich.edu). Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = dec,

doi = "10.1109/JQE.2017.2756641",

language = "English (US)",

volume = "53",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

AU - Dong, Mark

AU - Mangan, Niall M.

AU - Kutz, J. Nathan

AU - Cundiff, Steven T.

AU - Winful, Herbert G.

N1 - Funding Information: Manuscript received July 3, 2017; revised September 14, 2017; accepted September 20, 2017. Date of publication September 26, 2017; date of current version October 5, 2017. This work was supported in part by the Defense Advanced Research Projects Agency through the SCOUT program and in part through computational resources and services provided by Advanced Research Computing at the University of Michigan, Ann Arbor. (Corresponding author: Mark Dong.) M. Dong, S. T. Cundiff, and H. G. Winful are with the University of Michigan, Ann Arbor, MI 48109 USA (e-mail: markdong@umich.edu; cundiff@umich.edu; arrays@umich.edu). Publisher Copyright: © 2017 IEEE.

PY - 2017/12

Y1 - 2017/12

N2 - We present a traveling wave model for a semiconductor diode laser based on quantum wells. The gain model is carefully derived from first principles and implemented with as few phenomenological constants as possible. The transverse energies of the quantum well confined electrons are discretized to automatically capture the effects of spectral and spatial hole burning, the gain asymmetry, and the linewidth enhancement factor. We apply this model to semiconductor optical amplifiers and single-section phase-locked lasers. We are able to reproduce the experimental results. The calculated frequency modulated comb shows potential to be a compact, chip-scale comb source without additional external components.

AB - We present a traveling wave model for a semiconductor diode laser based on quantum wells. The gain model is carefully derived from first principles and implemented with as few phenomenological constants as possible. The transverse energies of the quantum well confined electrons are discretized to automatically capture the effects of spectral and spatial hole burning, the gain asymmetry, and the linewidth enhancement factor. We apply this model to semiconductor optical amplifiers and single-section phase-locked lasers. We are able to reproduce the experimental results. The calculated frequency modulated comb shows potential to be a compact, chip-scale comb source without additional external components.

KW - Semiconductor diode lasers

KW - frequency combs

KW - mode locked lasers

KW - quantum well lasers

KW - traveling wave simulations

UR - http://www.scopus.com/inward/record.url?scp=85031126473&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031126473&partnerID=8YFLogxK

U2 - 10.1109/JQE.2017.2756641

DO - 10.1109/JQE.2017.2756641

M3 - Article

AN - SCOPUS:85031126473

SN - 0018-9197

VL - 53

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 6

M1 - 8049451

ER -

Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

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Keywords

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