Truly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths

Jung Ho Yoon, Jiaming Zhang, Xiaochen Ren, Zhongrui Wang, Huaqiang Wu, Zhiyong Li, Mark Barnell, Qing Wu, Lincoln J. Lauhon, Qiangfei Xia, J. Joshua Yang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


1S1R (1 selector and 1 memristor) is a laterally scalable and vertically stackable scheme that can lead to the ultimate memristor density for either memory or neural network applications. In such a scheme, the memristor device needs to be truly electroforming-free and operated at both low currents and low voltages in order to be compatible with a two-terminal selector. In this work, a new type of memristor with a preconditioned tunneling conductive path is developed to achieve the required performance characteristics, including truly electroforming-free, low current below 30 µA (potentially <1 µA), and simultaneously low voltage ≈±0.7 V in switching operations. Such memristors are further integrated with two types of recently developed selectors to demonstrate the feasibility of 1S1R integration.

Original languageEnglish (US)
Article number1702010
JournalAdvanced Functional Materials
Issue number35
StatePublished - Sep 20 2017


  • conductive tunneling paths
  • electroforming free
  • low currents
  • low voltages
  • vertically integrated 1S1R

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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