Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition

N. Ṕŕ-Laperne*, C. Bayram, L. Nguyen-Tĥ, R. McClintock, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Intersubband (ISB) absorption at wavelengths as long as 5.3 μm is realized in GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition. By employing low aluminum content Al0.2Ga0.8N barriers and varying the well width from 2.6 to 5.1 nm, ISB absorption has been tuned from 4.5 to 5.3 μm. Theoretical ISB absorption and interband emission models are developed and compared to the experimental results. The effects of band offsets and the piezoelectric fields on these superlattices are investigated.

Original languageEnglish (US)
Article number131109
JournalApplied Physics Letters
Volume95
Issue number13
DOIs
StatePublished - Oct 12 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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