Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition

N. Ṕŕ-Laperne; C. Bayram; L. Nguyen-Tĥ; R. McClintock; M. Razeghi

doi:10.1063/1.3242027

Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al_0.2Ga_0.8N superlattices grown by metalorganic chemical vapor deposition

N. Ṕŕ-Laperne^*, C. Bayram, L. Nguyen-Tĥ, R. McClintock, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Intersubband (ISB) absorption at wavelengths as long as 5.3 μm is realized in GaN/Al_0.2Ga_0.8N superlattices grown by metalorganic chemical vapor deposition. By employing low aluminum content Al_0.2Ga_0.8N barriers and varying the well width from 2.6 to 5.1 nm, ISB absorption has been tuned from 4.5 to 5.3 μm. Theoretical ISB absorption and interband emission models are developed and compared to the experimental results. The effects of band offsets and the piezoelectric fields on these superlattices are investigated.

Original language	English (US)
Article number	131109
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3242027
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition",

abstract = "Intersubband (ISB) absorption at wavelengths as long as 5.3 μm is realized in GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition. By employing low aluminum content Al0.2Ga0.8N barriers and varying the well width from 2.6 to 5.1 nm, ISB absorption has been tuned from 4.5 to 5.3 μm. Theoretical ISB absorption and interband emission models are developed and compared to the experimental results. The effects of band offsets and the piezoelectric fields on these superlattices are investigated.",

author = "N. Ṕ{\'r}-Laperne and C. Bayram and L. Nguyen-Tĥ and R. McClintock and M. Razeghi",

year = "2009",

doi = "10.1063/1.3242027",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition

AU - Ṕŕ-Laperne, N.

AU - Bayram, C.

AU - Nguyen-Tĥ, L.

AU - McClintock, R.

AU - Razeghi, M.

PY - 2009

Y1 - 2009

N2 - Intersubband (ISB) absorption at wavelengths as long as 5.3 μm is realized in GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition. By employing low aluminum content Al0.2Ga0.8N barriers and varying the well width from 2.6 to 5.1 nm, ISB absorption has been tuned from 4.5 to 5.3 μm. Theoretical ISB absorption and interband emission models are developed and compared to the experimental results. The effects of band offsets and the piezoelectric fields on these superlattices are investigated.

AB - Intersubband (ISB) absorption at wavelengths as long as 5.3 μm is realized in GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition. By employing low aluminum content Al0.2Ga0.8N barriers and varying the well width from 2.6 to 5.1 nm, ISB absorption has been tuned from 4.5 to 5.3 μm. Theoretical ISB absorption and interband emission models are developed and compared to the experimental results. The effects of band offsets and the piezoelectric fields on these superlattices are investigated.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al_0.2Ga_0.8N superlattices grown by metalorganic chemical vapor deposition

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