Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

Heather N. Arnold; Cory D. Cress; Julian J. McMorrow; Scott W. Schmucker; Vinod K. Sangwan; Laila Jaber-Ansari; Rajan Kumar; Kanan P. Puntambekar; Kyle A. Luck; Tobin J. Marks; Mark C. Hersam

doi:10.1021/acsami.5b12259

Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

Heather N. Arnold, Cory D. Cress, Julian J. McMorrow, Scott W. Schmucker, Vinod K. Sangwan, Laila Jaber-Ansari, Rajan Kumar, Kanan P. Puntambekar, Kyle A. Luck, Tobin J. Marks^*, Mark C. Hersam

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrO_x as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm². The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

Original language	English (US)
Pages (from-to)	5058-5064
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	8
DOIs	https://doi.org/10.1021/acsami.5b12259
State	Published - Mar 2 2016

Keywords

chemical vapor deposition graphene
field-effect transistor
hybrid dielectrics
low-voltage electronics
radiation effects
total ionizing dose

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.5b12259

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Arnold, H. N., Cress, C. D., McMorrow, J. J., Schmucker, S. W., Sangwan, V. K., Jaber-Ansari, L., Kumar, R., Puntambekar, K. P., Luck, K. A., Marks, T. J., & Hersam, M. C. (2016). Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics. ACS Applied Materials and Interfaces, 8(8), 5058-5064. https://doi.org/10.1021/acsami.5b12259

@article{444066864943430a9c498db5bfd1039e,

title = "Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics",

abstract = "Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm2. The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.",

keywords = "chemical vapor deposition graphene, field-effect transistor, hybrid dielectrics, low-voltage electronics, radiation effects, total ionizing dose",

author = "Arnold, {Heather N.} and Cress, {Cory D.} and McMorrow, {Julian J.} and Schmucker, {Scott W.} and Sangwan, {Vinod K.} and Laila Jaber-Ansari and Rajan Kumar and Puntambekar, {Kanan P.} and Luck, {Kyle A.} and Marks, {Tobin J.} and Hersam, {Mark C.}",

note = "Funding Information: This work was supported by the Northwestern University Materials Research Science and Engineering Center (NSF DMR-1121262), and in part by the Defense Threat Reduction Agency MIPR #5-15399. H.N.A. and J.J.M. acknowledge support from NASA Space Technology Research Fellowships (NSTRF, NNX11AM87H and #NNX12AM44H, respectively), and K.A.L. acknowledges support from the NSF Graduate Research Fellowship Program. V.K.S. acknowledges support from the NSF 2-DARE program (NSF DMR EFRI-143510). This research also utilized the NUFAB cleanroom facility at Northwestern University and the NUANCE Center at Northwestern University, which is supported by the NSFMRSEC (DMR-1121262), the Keck Foundation, and the State of Illinois. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = mar,

day = "2",

doi = "10.1021/acsami.5b12259",

language = "English (US)",

volume = "8",

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T1 - Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

AU - Arnold, Heather N.

AU - Cress, Cory D.

AU - McMorrow, Julian J.

AU - Schmucker, Scott W.

AU - Sangwan, Vinod K.

AU - Jaber-Ansari, Laila

AU - Kumar, Rajan

AU - Puntambekar, Kanan P.

AU - Luck, Kyle A.

AU - Marks, Tobin J.

AU - Hersam, Mark C.

N1 - Funding Information: This work was supported by the Northwestern University Materials Research Science and Engineering Center (NSF DMR-1121262), and in part by the Defense Threat Reduction Agency MIPR #5-15399. H.N.A. and J.J.M. acknowledge support from NASA Space Technology Research Fellowships (NSTRF, NNX11AM87H and #NNX12AM44H, respectively), and K.A.L. acknowledges support from the NSF Graduate Research Fellowship Program. V.K.S. acknowledges support from the NSF 2-DARE program (NSF DMR EFRI-143510). This research also utilized the NUFAB cleanroom facility at Northwestern University and the NUANCE Center at Northwestern University, which is supported by the NSFMRSEC (DMR-1121262), the Keck Foundation, and the State of Illinois. Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/3/2

Y1 - 2016/3/2

N2 - Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm2. The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

AB - Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm2. The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

KW - chemical vapor deposition graphene

KW - field-effect transistor

KW - hybrid dielectrics

KW - low-voltage electronics

KW - radiation effects

KW - total ionizing dose

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SN - 1944-8244

VL - 8

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JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 8

ER -

Tunable Radiation Response in Hybrid Organic-Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

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