Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires

T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmüller*

*Corresponding author for this work

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from â0.8 to â1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to â25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.

Original languageEnglish (US)
Pages (from-to)6292-6300
Number of pages9
JournalNano letters
Volume18
Issue number10
DOIs
StatePublished - Oct 10 2018

Keywords

  • InGaAs
  • Nanowire lasers
  • molecular beam epitaxy
  • monolithic III/V integration on Si
  • photoluminescence
  • quantum wells
  • scanning transmission electron microscopy

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Stettner, T., Thurn, A., Döblinger, M., Hill, M. O., Bissinger, J., Schmiedeke, P., Matich, S., Kostenbader, T., Ruhstorfer, D., Riedl, H., Kaniber, M., Lauhon, L. J., Finley, J. J., & Koblmüller, G. (2018). Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. Nano letters, 18(10), 6292-6300. https://doi.org/10.1021/acs.nanolett.8b02503