Tuning the Er3+ sensitization by Si nanoparticles in nanostructured as-grown Al2 O3 films

S. Núez-Sánchez; R. Serna; J. García López; A. K. Petford-Long; M. Tanase; B. Kabius

doi:10.1063/1.3065520

Tuning the Er³⁺ sensitization by Si nanoparticles in nanostructured as-grown Al₂ O₃ films

S. Núez-Sánchez^*, R. Serna, J. García López, A. K. Petford-Long, M. Tanase, B. Kabius

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Nanostructured films consisting of single Si nanoparticles (NPs) and Er³⁺ ions layers separated by nanometer-scale Al₂ O ₃ layers of controlled thickness have been prepared in order to tune the energy transfer between Si NPs and Er³⁺ ions. The amorphous Si NPs with an effective diameter of ∼4.5 nm are formed during growth and are able to sensitize the Er³⁺ ions efficiently with no postannealing treatments. The characteristic distance for energy transfer from Si NPs to Er³⁺ ions in Al₂ O₃ is found to be in the 1 nm range. It is shown that in the nanostructured films, it is possible to achieve an optimized configuration in which almost all the Er³⁺ ions have the potential to be excited by the Si NPs. This result stresses the importance of controlling the dopant distribution at the nanoscale to achieve improved device performance.

Original language	English (US)
Article number	013118
Journal	Journal of Applied Physics
Volume	105
Issue number	1
DOIs	https://doi.org/10.1063/1.3065520
State	Published - 2009

Funding

We are grateful to M. Jiménez de Castro (CSIC, Spain) for helpful discussions and to J. Hiller (ANL, U.S.A.) for assistance in cross-section preparation. This work has been supported by CICYT (Spain) under Project No. TEC2006-04538-MIC and by the EU under IST-NMP STREP-017501 contract. S.N.-S. acknowledges the Ministerio de Educación y Ciencia (Spain) for support from a FPU contract. TEM was performed in the Electron Microscopy Center at Argonne National Laboratory, supported under Contract No. DE-AC02-06CH11357 between UChicago Argonne, LLC, and the DOE.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3065520

Cite this

@article{893c5de33b1347d29e7de7f2950a8635,

title = "Tuning the Er3+ sensitization by Si nanoparticles in nanostructured as-grown Al2 O3 films",

abstract = "Nanostructured films consisting of single Si nanoparticles (NPs) and Er3+ ions layers separated by nanometer-scale Al2 O 3 layers of controlled thickness have been prepared in order to tune the energy transfer between Si NPs and Er3+ ions. The amorphous Si NPs with an effective diameter of ∼4.5 nm are formed during growth and are able to sensitize the Er3+ ions efficiently with no postannealing treatments. The characteristic distance for energy transfer from Si NPs to Er3+ ions in Al2 O3 is found to be in the 1 nm range. It is shown that in the nanostructured films, it is possible to achieve an optimized configuration in which almost all the Er3+ ions have the potential to be excited by the Si NPs. This result stresses the importance of controlling the dopant distribution at the nanoscale to achieve improved device performance.",

author = "S. N{\'u}ez-S{\'a}nchez and R. Serna and L{\'o}pez, {J. Garc{\'i}a} and Petford-Long, {A. K.} and M. Tanase and B. Kabius",

note = "Funding Information: We are grateful to M. Jim{\'e}nez de Castro (CSIC, Spain) for helpful discussions and to J. Hiller (ANL, U.S.A.) for assistance in cross-section preparation. This work has been supported by CICYT (Spain) under Project No. TEC2006-04538-MIC and by the EU under IST-NMP STREP-017501 contract. S.N.-S. acknowledges the Ministerio de Educaci{\'o}n y Ciencia (Spain) for support from a FPU contract. TEM was performed in the Electron Microscopy Center at Argonne National Laboratory, supported under Contract No. DE-AC02-06CH11357 between UChicago Argonne, LLC, and the DOE.",

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AU - López, J. García

AU - Petford-Long, A. K.

AU - Tanase, M.

AU - Kabius, B.

N1 - Funding Information: We are grateful to M. Jiménez de Castro (CSIC, Spain) for helpful discussions and to J. Hiller (ANL, U.S.A.) for assistance in cross-section preparation. This work has been supported by CICYT (Spain) under Project No. TEC2006-04538-MIC and by the EU under IST-NMP STREP-017501 contract. S.N.-S. acknowledges the Ministerio de Educación y Ciencia (Spain) for support from a FPU contract. TEM was performed in the Electron Microscopy Center at Argonne National Laboratory, supported under Contract No. DE-AC02-06CH11357 between UChicago Argonne, LLC, and the DOE.

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N2 - Nanostructured films consisting of single Si nanoparticles (NPs) and Er3+ ions layers separated by nanometer-scale Al2 O 3 layers of controlled thickness have been prepared in order to tune the energy transfer between Si NPs and Er3+ ions. The amorphous Si NPs with an effective diameter of ∼4.5 nm are formed during growth and are able to sensitize the Er3+ ions efficiently with no postannealing treatments. The characteristic distance for energy transfer from Si NPs to Er3+ ions in Al2 O3 is found to be in the 1 nm range. It is shown that in the nanostructured films, it is possible to achieve an optimized configuration in which almost all the Er3+ ions have the potential to be excited by the Si NPs. This result stresses the importance of controlling the dopant distribution at the nanoscale to achieve improved device performance.

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