Tunnel magnetoresistance in trilayer junctions from first principles: Cr δ -layer doped GaN/AlN/GaN (0 0 0 1)

X. Y. Cui*, B. Delley, A. J. Freeman, C. Stampfl

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The microscopic mechanism of the tunneling magnetoresistance (TMR) in Cr-doped GaN/AlN/GaN (0 0 0 1) trilayer junctions is studied based on density functional theory calculations. For enhanced performance, we propose δ -Cr-layer doping in GaN, close to the GaN/AlN interfaces. Depending on the doping concentration, Cr dopants produce local metallic (1 ML) or half-metallic (frac(1, 2) and frac(1, 4) ML) states surrounded by the host semiconductor materials. Very thin AlN barriers are predicted to yield a low TMR effect. These results help explain existing experimental results and are expected to be valuable with regard to the practical fabrication of improved pure semiconductor spintronic devices.

Original languageEnglish (US)
Pages (from-to)395-399
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume322
Issue number4
DOIs
StatePublished - Feb 1 2010

Keywords

  • Density functional theory
  • Electronic structure
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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